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Numerical Study on the Effect of Water-cooling Jacket Radius on Czochralski Silicon

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Abstract

In order to create a suitable temperature environment in the cooling process of Czochralski silicon (Cz-Si), a water-cooling jacket is usually set, which can improve the crystal temperature gradient and the crystal cooling rate. In this paper, a 2D global quasi-steady axisymmetric model is established to simulate the effects of water-cooling jacket radius of the melt flow and heat transfer, solid–liquid (S-L) interface shape and crystal thermal stress during the silicon crystal growth process. The results show that changing the radius of the water-cooling jacket has less effect on the melt flow, but more significant effect on the crystal heat transfer. The smaller the radius of the water-cooling jacket, the higher the argon flow rate nearby, the better the cooling effect, it will reduce the convexity of the S-L interface and the thermal stress. According to the calculation results, compared with ΔR = 35 mm and 55 mm, the crystal pulling rate of ΔR = 15 mm can be increased by 27.1% and 36.1% respectively.

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Data Availability

All data generated or analyzed during this study are included in this published article.

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The authors wish to acknowledge the financial support on this research from the Key Research and Development Program of Jiangsu Province of China (grant no. BE2019009-003), Industry–University Research Project (Wuxi Suntech Solar Power Co., Ltd., grant no. 8421130025), and the National Natural Science Foundation for Young Scholars of China (grant no. 51206069).

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Funding

The Project is supported by Key Research and Development Program of Jiangsu Province of China (Grant No. BE2019009-003), Industry-University-Research Project (Wuxi Suntech Solar Power Co., Ltd. Grant No. 8421130025). The National Natural Science Foundation for Young Scholars of China (Grant No. 51206069).

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Authors and Affiliations

  1. School of Energy and Power Engineering, Jiangsu University, Zhenjiang, 212013, Jiangsu, China

    Wenjia Su, Jiaqi Li, Zhicheng Guan & Zhen Zhang

  2. The Institute of Technological Sciences, Wuhan University, Wuhan, 430072, Hubei, China

    Jiulong Li

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  1. Wenjia Su
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Contributions

Wenjia Su contributed to the conception of the study. Jiaqi Li and Jiulong Li performed the simulation and contributed significantly to analysis and manuscript written. Zhen Zhang performed the data analyses and modified the manuscript. Zhicheng Guan helped perform the analysis with constructive discussion.

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Correspondence to Wenjia Su.

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Su, W., Li, J., Li, J. et al. Numerical Study on the Effect of Water-cooling Jacket Radius on Czochralski Silicon. Silicon 15, 5307–5315 (2023). https://doi.org/10.1007/s12633-023-02430-6

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