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Review of 2D Bi2X3 (X = S, Se, Te): from preparation to photodetector

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Abstract

Detector has become an indispensable part of human beings. The increasing demand for photodetectors with high performance has promoted the research of novel materials. At the same time, with the development of rising material system, two-dimensional (2D) materials attract a lot of attention, while the suitable option for fabricating photodetector is still limited. The prospering of bismuth chalcogenides injected new vitality for material field, thereinto, the unique topological insulator characteristics make the research on bismuth selenide (Bi2Se3) and bismuth telluride (Bi2Te3) intriguing. 2D Bi2X3 also exhibits unique features among various 2D materials, of which, the adjustable narrow energy band gap and polarization-sensitive photocurrent contribute to the promising application of high performance and broadband photodetector. In this review, from a bottom-up perspective, we summarize fundamental properties, synthesis method, photodetector performance of 2D Bi2X3 based on the previous study, which provide an overall perspective of 2D Bi2X3. Wherein, the section of the photodetector is specifically discussed with regard to pure Bi2X3 photodetector and heterojunction photodetector. A brief summary and outlook were also explored in the end.

Graphical abstract

摘要

探测器已经成为人类不可缺少的一部分，对高性能的光电探测器需求的不断增加促进了对新型材料的研究。同时，随着材料体系的不断发展，二维材料吸引了大量的关注，而用于制造光电探测器的合适选择仍然有限。铋族化合物的蓬勃发展为材料领域注入了新的活力，其中，独特的拓扑绝缘体特性使对硒化铋和碲化铋的研究令人着迷。二维Bi2X3在各种二维材料中也表现出独特的特征，其中，可调节的窄带隙、偏振敏感的光电流等特点使其在高性能、宽频带光电探测器上具有很好的应用前景。在这篇综述中，我们从自下而上的角度，在以往研究的基础上总结了二维Bi2X3的基本特性、合成方法、光电探测器的性能，为二维Bi2X3提供了一个整体的视角。其中，光电探测器的部分具体讨论了纯Bi2X3光电探测器和异质结光电探测器。最后进行了简要的总结和展望。

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Fig. 1

Reproduced with permission from Ref. [35]. Copyright 2020, Wiley–VCH GmbH. b Crystal structure of and Bi2Se3. Reproduced with permission from Ref. [34]. Copyright 2019, The Royal Society of Chemistry

Fig. 2

Reproduced with permission from Ref. [44]. Copyright 2009, Springer Nature. e Calculated band gap of Bi2Se3. Reproduced with permission from Ref. [45]. Copyright 2014, American Physical Society. f Band structure of ultrathin films of Bi2Te3, upper panels: ARPES intensity maps; middle panels: differential ARPES intensity maps; lower panels: band structures from first-principles calculations. Reproduced with permission from Ref. [46]. Copyright 2010, WILEY–VCH Verlag GmbH & Co. g Thickness-dependent band gap of Bi2Se3 and Bi2Te3. Reproduced with permission from Ref. [47]. Copyright 2013, American Physical Society

Fig. 3

Reproduced with permission from Ref. [35]. Copyright 2020, Wiley–VCH GmbH. b Stokes and anti-Stokes Raman spectra of Bi2Se3 nanoplatelets for different thickness excited by a 632.8-nm laser; c zoom-in view of A 11g modes for various thicknesses of quintuple-layers (QLs) excited by 532 nm (left panel) and 632.8 nm (right panel) lasers; d A 11g mode frequency versus thickness; e intensity ratio of A1g branch (blue circle line) and Eg symmetry modes (pink square line), where corresponding intensity ratio of bulk sample is represented by a bold line. Reproduced with permission from Ref. [52]. Copyright 2011, American Chemical Society. f Raman spectra of Bi2Se3 on SiO2; g intensity ratio of I(A2u)/I(A 21g ); h shift of A 21g and E 2g mode frequencies. Reproduced with permission from Ref. [53]. Copyright 2015, American Chemical Society. i FWHM of E 2g mode dependence on thickness. Reproduced with permission from Ref. [52]. Copyright 2011, American Chemical Society. j Observed Raman spectra of Bi2Te3 films with a thickness of 1, 2, 3, 5, 6, 7 and 40QL; k FWHM of SPM and intensity ratio I(SPM)/I(E 2g ) for Bi2Te3 films with different thickness; l frequency variation of A 11g and A 21g as a function of film thickness. Reproduced with permission from Ref. [55]. Copyright 2013, Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2013. m, n Schematic diagrams of observed lattice vibration modes. m Reproduced with permission from Ref. [31]. Copyright 2014, American Physical Society. n Reproduced with permission from Ref. [53]. Copyright 2015, American Chemical Society

Fig. 4

Reproduced with permission from Ref. [57]. Copyright 2010, American Chemical Society. c Slab of Bi2Se3 exfoliated using indium-bonded method. d AFM scans (20 μm × 20 μm) of Bi2Se3 slabs produced from six exfoliations. Reproduced with permission from Ref [59]. Copyright 2017, American Chemical Society. e Schematic representation of formation of Bi2Se3 nanosheets. Reproduced with permission from Ref. [63] Copyright 2014, Elsevier B.V. f Process of electrochemical exfoliation of Bi2Se3 and Bi2Te3. Reproduced with permission from Ref. [65] Copyright 2016, American Chemical Society

Fig. 5

Reproduced with permission from Ref. [66]. Copyright 2017, Wiley–VCH Verlag GmbH & Co. b TEM image and c ED pattern of Bi2Se3 crystals. Reproduced with permission from Ref. [67]. Copyright 2003, Elsevier Science B.V. d TEM images of Bi2Te3 nanoplates; e schematic depiction of possible formation process of Bi2Te3 nanoplates. Reproduced with permission from Ref. [68]. Copyright 2009, Elsevier B.V. f Scheme for growth of a nanodisc from a nanocrystal, involving attachment of small NCs and recrystallization into a single-crystal nanodisc, and a second layer grows epitaxially on the primary nanodisc and corresponding TEM images. Reproduced with permission from Ref. [41]. Copyright 2012, American Chemical Society. g TEM characterization of Bi2Se3 nanosheets; h AFM image of Bi2Se3 nanosheets; i statistical analysis of lateral diameters of 200 Bi2Se3 nanosheets obtained from TEM images; j heights of 200 Bi2Se3 nanosheets determined by AFM. Reproduced with permission from Ref. [71]. Copyright 2016, Wiley–VCH GmbH

Fig. 6

Reproduced with permission from Ref. [72]. Copyright 2009, AIP Publishing. c AFM image of Bi2Te3 for obtaining extended area of continuous single QL (inset being an atomic scheme structure of QL) and height profile of surface topography along dashed line in AFM image. Reproduced with permission from Ref. [73]. Copyright 2011, Elsevier B.V. d STM image of two spirals originating at a SiC step edge; e ball-and-stick models of Bi2Se3 along (111) direction, and a 2D island with type A steps with two dangling bonds per edge atom and type B steps with one dangling bond; f schematic diagrams showing a Bi2Se3 island leaping over a straight upper SiC step; g schematic diagrams (side and top views) illustrating formation of a clockwise spiral. Reproduced with permission from Ref. [75]. Copyright 2012, American Physical Society

Fig. 7

Reproduced with permission from Ref. [35]. Copyright 2020, Wiley–VCH GmbH. b TEM images of Bi2Se3 nanoribbons with corresponding HRTEM images and (insets) SAED patterns. Reproduced with permission from Ref. [83]. Copyright 2010, American Chemical Society. c AFM image and a height profile (dashed lines) of Bi2Te3 NP (left) and Bi2Se3 NP (right); d schematic drawing of a vapor–solid (VS) growth process in a horizontal tube furnace and NPs growth mechanism with a side view of NPs (1 QL) showing Se-terminated top and bottom surfaces with saturated bonds and side surfaces with dangling bonds ready to bind with incoming atoms. Reproduced with permission from Ref. [84]. Copyright 2010, American Chemical Society. e Typical photograph of Bi2Se3 nanoplates epitaxially grown on a multilayer graphene substrate. Reproduced with permission from Ref. [85]. Copyright 2010, American Chemical Society. f OM images of 3 × 3 arrays of triangular Bi2Se3 nanoplates. Reproduced with permission from Ref. [86]. Copyright 2012, American Chemical Society. g Typical optical microscopy image in transmission mode of large-area, few-layer Bi2Se3 nanosheets grown on a mica substrate, where blank mica substrate is black circle. Reproduced with permission from Ref. [87]. Copyright 2012, Nat. Chem. h Optical images of van der Waals grown Bi2Se3 on h-BN. Reproduced with permission from Ref. [53]. Copyright 2015, American Chemical Society. i Schematic representation of procedures for patterning of 2D chalcogenide crystals; j scanning electron microscopy image of an array of spiral Bi2Se3 crystals; k AFM image of a spiral Bi2Se3 crystal. Reproduced with permission from Ref. [88]. Copyright 2015, Springer Nature. l Representative OM images of as-synthesized Bi2Se3 flakes with hexagon shape on mica substrates; m statistical relation between nucleation density and domain size of Bi2Se3 flakes grown at 500, 550 and 600 °C, respectively. Reproduced with permission from Ref. [89]. Copyright 2018, Wiley–VCH GmbH

Fig. 8

Reproduced with permission from Ref. [37]. Copyright 2020, Wiley–VCH GmbH. c Schematic diagram of Bi2Se3 FET; d transfer characteristics of Bi2Se3 with different thicknesses; e correlation between carrier mobility and thickness with all data measured at room temperature; f time-resolved photoresponse of device at a bias voltage of 1 V and an illumination power of 142.93 mW·cm−2; g corresponding fitting curve of photocurrent versus laser power intensity (all data were measured at 300 K using 1456-nm laser under vacuum (1.33×10−4 Pa)); h corresponding fitting curve of photocurrent versus laser power intensity at T = 80 K; i I–V curves of a Bi2Se3-based device in dark mode and under different incident light powers at T = 80 K; j response time and decay time at different temperatures; k time-traced photoresponse at various temperatures at Vbias = 1 V and P = 142.93 mW·cm−2; l on/off ratio, Idark, and Ilight; m responsivity and detectivity in temperature range from 80 to 300 K. Reproduced with permission from Ref. [89]. Copyright 2018, Wiley–VCH GmbH. n AFM image of a representative flexible Bi2Te3 nanoplate photodetector; photo-switching behavior of flexible NIR Bi2Te3 nanoplate photodetector after bending for o 0, p 300 times, respectively. Reproduced with permission from Ref. [92]. Copyright 2019, Elsevier B.V

Fig. 9

Reproduced with permission from Ref. [98]. Copyright 2020, the Royal Society of Chemistry. d Schematic illustration of growth of Bi2Se3 NF/Si NW heterojunction; e responsivity and f detectivity of sample under different NIR intensities. Reproduced with permission from Ref. [100]. Copyright 2017, American Chemical Society. g Schematic device structure of graphene−Bi2Se3 heterostructure device. Reproduced with permission from Ref. [106]. Copyright 2017, American Chemical Society. h Schematic diagram of device structure with measurement setup; i Dirac band diagrams of n-type Bi2Se3 and p-type SnTe. j Band alignment and photocurrent generation of SnTe/Bi2Se3 heterojunction; k bias voltage modulation mechanism of photodetector. Reproduced with permission from Ref. [107] Copyright 2020, Elsevier B.V. l 3D schematic illustration of Bi2Se3/WSe2 heterostructure; m band diagrams of heterostructure at different bias voltages. Reproduced with permission from Ref. [108]. Copyright 2020, Science China Press and Springer-Verlag GmbH Germany, part of Springer Nature. n Schematic illustration of graphene/Bi2Te3 heterostructure phototransistor device; o photocurrent as a function of gate voltage and (inset) energy diagrams of heterostructure when VG < VD and VG > VD; p device photoresponsivity as a function of incident power at 532, 980 and 1550 nm, respectively. Reproduced with permission from Ref. [109]. Copyright 2015, American Chemical Society. q Device schematic diagram of vertically stacked WSe2/Bi2Te3 p−n heterojunction; r photoresponsivity at different wavelengths under self-powered mode (inset) and bias mode. Reproduced with permission from Ref. [111]. Copyright 2019, American Chemical Society

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Acknowledgements

This work was financially supported by the National Key Research and Development Program of China (No. 2019YFA0705201) and Heilongjiang Touyan Team.

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Authors and Affiliations

  1. Department of Optoelectronic Information Science, School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China

    Zhi Zeng, Dong-Bo Wang, Bing-Ke Zhang, Jing-Wen Pan, Dong-Hao Liu, Si-Hang Liu, Shu-Jie Jiao, Tian-Yuan Chen, Lian-Cheng Zhao & Jin-Zhong Wang

  2. Changchun University Science and Technology, School of Physics, The State Key Laboratory of High Power Semiconductor Lasers, Changchun, 130022, China

    Xuan Fang

  3. School of Astronautics, Harbin Institute of Technology, Harbin, 150001, China

    Jia-Mu Cao

  4. Center for High Pressure Science and Technology Advanced Research, Shanghai, 201203, China

    Gang Liu

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  1. Zhi Zeng
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  11. Gang Liu
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Correspondence to Dong-Bo Wang, Xuan Fang, Jia-Mu Cao, Gang Liu or Jin-Zhong Wang.

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Zeng, Z., Wang, DB., Fang, X. et al. Review of 2D Bi2X3 (X = S, Se, Te): from preparation to photodetector. Rare Met. 43, 2349–2370 (2024). https://doi.org/10.1007/s12598-023-02560-1

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  • DOI: https://doi.org/10.1007/s12598-023-02560-1

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