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Remote heteroepitaxy of transition metal dichalcogenides through monolayer hexagonal boron nitride

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Abstract

As a very promising epitaxy technology, the remote epitaxy has attracted extensive attention in recent years, in which graphene is the most used interlayer material. As an isomorphic of graphene, two-dimensional (2D) hexagonal boron nitride (h-BN), is another promising interlayer for the remote epitaxy. However, there is a current debate on the feasibility of using h-BN as interlayer in the remote epitaxy. Herein, we demonstrate that the potential field of sapphire can completely penetrate monolayer h-BN, and hence the remote epitaxy of ZrS2 layers can be realized on sapphire substrates through monolayer h-BN. The field of sapphire can only partially penetrate the bilayer h-BN and result in the mixing of remote epitaxy and van der Waals (vdWs) epitaxy. Due to the weak interfacial scattering and high crystalline quality of ZrS2 epilayer, the ZrS2 photodetector with monolayer h-BN shows the best performance, with an on/off ratio of more than 2 × 105 and a responsivity up to 379 mA·W−1. This work provides an efficient approach to prepare single-crystal transition metal dichalcogenides and their heterojunctions with h-BN, which have great potential in developing large-area 2D electronic devices.

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Acknowledgements

This work was financially supported by the National Natural Science Foundation of China (Nos. 62274151 and 61874106), the Natural Science Foundation of Beijing Municipality (No. 4212045), and the Strategic Priority Research Program of Chinese Academy of Sciences (No. XDB43000000).

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Authors and Affiliations

  1. Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China

    Jidong Huang, Jingren Chen, Siyu Zhang, Ji Jiang, Jingzhen Li, Libin Zeng, Zhigang Yin, Jinliang Wu & Xingwang Zhang

  2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China

    Jidong Huang, Jingren Chen, Siyu Zhang, Ji Jiang, Jingzhen Li, Libin Zeng, Zhigang Yin & Xingwang Zhang

  3. Faculty of Science, Beijing University of Technology, Beijing, 100124, China

    Junhua Meng

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  1. Jidong Huang
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Huang, J., Chen, J., Meng, J. et al. Remote heteroepitaxy of transition metal dichalcogenides through monolayer hexagonal boron nitride. Nano Res. 17, 3224–3231 (2024). https://doi.org/10.1007/s12274-023-6171-3

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