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Interfacial engineering enables polyaniline-decorated bismuth sulfide nanorods towards ultrafast metal–semiconductor-metal UV-Vis broad spectra photodetector

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Abstract

Herein, we reported photoelectric measurements of the polyaniline decorated with bismuth sulfide (Bi2S3/PANI) nanohybrid based metal-semiconductor-metal (MSM) device in the broad electromagnetic (EM) spectrum from ultraviolet (UV) to visible (Vis) range. Bi2S3 nanorods decorated with π-conjugated polymer PANI were utilized as photodetection devices has a wide range of applications in imaging and communication. In such a novel structure, the fast electron transfer at the interface of Bi2S3 and PANI occurs, which enhances the performance of the photodetectors. Current–voltage (I–V) characteristics of the MSM photodetector device of Bi2S3/PANI nanohybrid show good ohmic nature. This photodetector device offers the highest external quantum efficiency (EQE) 104% in the UV and visible regions. It also shows the greatest detectivity of the order 1014 Jones. The photoresponsivity of the Bi2S3/PANI nanohybrid photodetector device shows 270 mAW−1 in UV region and 1270 mAW−1 in visible region at only 1 V with the minimum optical signal of 50 µWcm−2. The highest photoresponsivity of the Bi2S3/PANI nanohybrid photodetector offers 26,760 mAW−1 and 13,250 mAW−1 for the UV and visible spectra, respectively. The higher values of the LDR are 64.31 dB and 58.21 dB in the UV and visible regions, respectively, at 100 V with the lowest illumination intensity. The minimum value of NEP found in the order of 10−9 W which is the lowest value, suggests that the nanohybrid material is perfect for low-intensity photon signals. This work provides simple and effective method for the preparation of MSM photodetector technology exhibits a magnificent performance in the UV-to-Vis region.

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Acknowledgements

Anshika Singh is thankful to the University grants commission (UGC) Delhi, India, for the financial support.

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  1. Anshika Singh

    Present address: SAMTEL Centre for Display Technologies, Indian Institute of Technology Kanpur, Kanpur, Uttar Pradesh, India

Authors and Affiliations

  1. Advanced Nanomaterials Research Laboratory, U.G.C. Centre of Advanced Studies, Department of Physics, University of Allahabad, Prayagraj, Uttar Pradesh, India

    Anshika Singh & Pratima Chauhan

  2. Nanomaterials and Sensors Research Laboratory, Department of Physics, Babasaheb Bhimrao Ambedkar University, Lucknow, Uttar Pradesh, India

    Arpit Verma & Bal Chandra Yadav

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Contributions

Anshika Singh: writing—original draft, conceptualization, methodology, validation, investigation, resources. Arpit Verma: conceptualization, visualization, and discussions. Bal Chandra Yadav: visualization and discussions. Pratima Chauhan: supervision, review, and editing. During the revision also, all the authors reviewed the entire manuscript.

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Singh, A., Chauhan, P., Verma, A. et al. Interfacial engineering enables polyaniline-decorated bismuth sulfide nanorods towards ultrafast metal–semiconductor-metal UV-Vis broad spectra photodetector. Adv Compos Hybrid Mater 7, 88 (2024). https://doi.org/10.1007/s42114-024-00878-7

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