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Controllable substitutional vanadium doping in wafer-scale molybdenum disulfide films

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Abstract

Substitutional atomic doping of transition metal dichalcogenides (TMDs) in the chemical vapor deposition (CVD) process is a promising and effective strategy for modifying their physicochemical properties. However, the conventional CVD method only allows narrow-range modulation of the dopant concentration owing to the low reactivity of the precursors. Moreover, the growth of wafer-scale monolayer TMD films with high dopant concentrations is much more challenging. Herein, we report a facile doping approach based on liquid precursor-mediated CVD process for achieving high vanadium (V) doping in the MoS2 lattice with excellent doping uniformity and stability. The lateral growth of the host MoS2 lattice and the reactivity of the V precursor were simultaneously improved by introducing an alkali metal halide as a reaction promoter. The metal halide promoter enabled the wafer-scale synthesis of V-incorporated MoS2 monolayer film with excessively high doping concentrations. The excellent wafer-scale uniformity of the highly V-doped MoS2 film was confirmed through a series of microscopic, spectroscopic, and electrical analyses.

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Acknowledgements

This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Korea government (MSIT) (Nos. 2019R1A2C1009025 and 2022R1A4A2000823) and 2022 research Fund (No. 1.220024.01) of Ulsan National Institute of Science & Technology (UNIST).

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Author notes

  1. Jihyung Seo and Eunbin Son contributed equally to this work.

Authors and Affiliations

  1. Department of Materials Science and Engineering, Graduate School of Semiconductor Materials and Devices Engineering, Graduate School of Carbon Neutrality, Low Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology, Ulsan, 44919, Republic of Korea

    Jihyung Seo, Eunbin Son, Jiha Kim & Hyesung Park

  2. School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea

    Sun-Woo Kim & Jeong Min Baik

  3. SKKU Institute of Energy Science and Technology, Sungkyunkwan University, Suwon, 16419, Republic of Korea

    Sun-Woo Kim & Jeong Min Baik

Authors
  1. Jihyung Seo
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  2. Eunbin Son
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  3. Jiha Kim
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  4. Sun-Woo Kim
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Correspondence to Jeong Min Baik or Hyesung Park.

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Seo, J., Son, E., Kim, J. et al. Controllable substitutional vanadium doping in wafer-scale molybdenum disulfide films. Nano Res. 16, 3415–3421 (2023). https://doi.org/10.1007/s12274-022-4945-7

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  • DOI: https://doi.org/10.1007/s12274-022-4945-7

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