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Experimental and simulation study of charge transport mechanism in HfTiOx high-k gate dielectric on SiGe heterolayers

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Abstract

Thin HfTiOx high-k gate dielectric (Ti ~26.6%) has been sputter-deposited on strained Si0.81Ge0.19 heterolayers. The energy band discontinuities and interface properties were studied using X-ray photoelectron spectroscopy. The conduction band offset, and valance band offset between HfTiOx and Si0.81Ge0.19 were found to be 1.34 and 2.52 eV, respectively. Further, temperature-dependent (300–500 K) current density–voltage measurements (J–V) were utilized to explore the underlying leakage current conduction mechanism. The conductive dislocation and emission barrier heights at the hetero-interface have also been extracted from temperature-dependent J–V measurement. The barrier height of 1.22 to 2.02 eV for Schottky emission and 0.76 to 1.26 eV for Poole–Frenkel emission were estimated at the hetero-interface. To better understand the conduction mechanism between the hetero-interface and temperature-dependent J–V, a calibrated TCAD simulation was carried out.

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Acknowledgements

Sandipan Mallik and Shrabani Guhathakurata would like to sincerely thank the Department of Science and Technology–Science and Engineering Research Board (DST-SERB), New Delhi, India, for providing research funding [Project no: ECR/2018/002477] under the DST-ECR scheme.

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Authors and Affiliations

  1. Biju Patnaik University of Technology, Rourkela, 769004, India

    P P Maiti

  2. Department of Electronics and Communication Engineering, NIST (Autonomous), Berhampur, 761008, India

    P P Maiti, Ajit Dash, S Guhathakurata & S Mallik

  3. Department of Electronics and Communication Engineering, Silicon Institute of Technology, Bhubaneswar, 751024, India

    S Das

  4. School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea

    Atanu BAG

  5. Department of Electronics and Communication Engineering, Siksha ‘O’ Anusandhan (Deemed to be University), Bhubaneswar, 751030, India

    T P Dash

  6. Department of Electrical Engineering, Dayalbagh Educational Institute, Agra, 282005, India

    G Ahmad

  7. Department of Electronics and Communication Engineering, Indian Institute of Technology Kharagpur, Kharagpur, 721302, India

    C K MAITI

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  1. P P Maiti
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Correspondence to S Mallik.

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Maiti, P.P., Dash, A., Guhathakurata, S. et al. Experimental and simulation study of charge transport mechanism in HfTiOx high-k gate dielectric on SiGe heterolayers. Bull Mater Sci 45, 39 (2022). https://doi.org/10.1007/s12034-021-02622-z

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  • DOI: https://doi.org/10.1007/s12034-021-02622-z

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