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Room temperature deposition of amorphous p-type CuFeO2 and fabrication of CuFeO2/n-Si heterojunction by RF sputtering method

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Abstract

Transparent conducting amorphous p-type CuFeO2 (CFO) thin film was prepared by radio-frequency (RF) magnetron sputtering method at room temperature using polycrystalline CuFeO2 target. Amorphous structure of as-deposited film was confirmed by XRD. XPS analysis convinced that the chemical state of Cu+ and Fe3+ in the film, and the chemical composition of the thin films is close to the stoichiometry of CuFeO2. Surface morphology of the film was analysed by SEM studies. p-type nature and concentration of carriers was investigated by Hall effect measurement. The p–n heterojunction in the structure of Al/n-Si/p-CuFeO2/Al showed good rectifying behaviour with a forward and reverse currents ratio of 555 at 2 V. The turn-on voltage and reverse leakage current values were found to be 0.9 V and 4 μA at −2 V. Further, the conduction mechanism of forward bias voltage was controlled by thermionic emission (TE) and trap-space charge limited current (TCLC) mechanisms.

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Acknowledgement

Financial support from the National Natural Science Foundation (Project nos. 51172237 and 61306083) is gratefully acknowledged.

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Authors and Affiliations

  1. Anhui Provincial Key Lab of Photonics Devices and Materials, Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei, 230031, China

    TAO ZHU, ZANHONG DENG, XIAODONG FANG, WEIWEI DONG, JINGZHEN SHAO, RUHUA TAO & SHIMAO WANG

  2. Key Lab of Novel Thin Film Solar Cells, Chinese Academy of Sciences, Hefei, 230031, China

    TAO ZHU, ZANHONG DENG, XIAODONG FANG, WEIWEI DONG, JINGZHEN SHAO, RUHUA TAO & SHIMAO WANG

  3. University of Science and Technology of China, Hefei, 230026, China

    TAO ZHU & XIAODONG FANG

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  1. TAO ZHU
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  2. ZANHONG DENG
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  4. WEIWEI DONG
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Correspondence to XIAODONG FANG.

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ZHU, T., DENG, Z., FANG, X. et al. Room temperature deposition of amorphous p-type CuFeO2 and fabrication of CuFeO2/n-Si heterojunction by RF sputtering method. Bull Mater Sci 39, 883–887 (2016). https://doi.org/10.1007/s12034-016-1209-8

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  • DOI: https://doi.org/10.1007/s12034-016-1209-8

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