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Preparation of sputter-deposited CuOx thin film with p-type conductivity and application as thin film transistor

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Abstract

This paper explored the effect of deposition conditions on the characteristics of copper oxide (CuOx) thin films prepared by direct current (DC) magnetron sputtering. X-ray diffraction exhibited that CuO with n-type conductivity was the main composition regardless of the DC magnetron sputtering power whereas the phase transition from n-type CuO to p-type Cu2O was observed with decreasing the oxygen pressure (OP) from 40 to 20%. The optical band gap ranges of 1.6–1.9 eV, which are characteristic of n-type CuO, were determined for samples prepared with OPs of 30–40% while the optical band gap of 2.3 eV, which is characteristic of p-type Cu2O, was measured for samples prepared with an OP of 20%. In addition, only Cu+ X-ray photoelectron spectroscopy (XPS) peak at the ~932.6 eV position exists in the films deposited with an OP of 20%, whereas only Cu2+ XPS peaks at ~934.2 eV and in the range of 940–945 eV are observed in the films deposited with an OP of 40%. Furthermore, as a result of XPS depth profile analysis, it was confirmed that the composition ratio of the sample prepared at an OP of 20% was Cu2O, whereas the composition ratio of the sample prepared at an OP of 40% was CuO. These suggest that the CuOx thin films could be constantly converted from n-type CuO to p-type Cu2O by decreasing the oxygen partial pressure. Thin film transistors with Cu2O deposited at 20% OP revealed p-type characteristics such as onset voltage (VON) of −3 V, saturated hole mobility of 8 cm2/Vs at VGS = −28 V, subthreshold swing of 0.86 V/decade at VGS–VON = −0.5 V, and on/off ratio of 1.14 × 103.

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Acknowledgements

This study was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2019R1D1A3A0310351513).

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Authors and Affiliations

  1. Department of Materials Science and Engineering, Hoseo University, Asan, Chungnam, 31499, Republic of Korea

    So Jeong Park

  2. Department of Automotive ICT Engineering, Hoseo University, Dangjin, Chungnam, 31702, Republic of Korea

    Eui-Jung Yun

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Park, S.J., Yun, EJ. Preparation of sputter-deposited CuOx thin film with p-type conductivity and application as thin film transistor. J. Korean Phys. Soc. 81, 867–875 (2022). https://doi.org/10.1007/s40042-022-00596-7

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