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High-performance broadband photodetector based on PtSe2/MoS2 heterojunction from visible to near-infrared region

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Abstract

Broadband photodetectors based on narrow bandgap 2D materials have garnered considerable interest for application in the field of optoelectronic devices. However, their large dark current hinders device performance. In this work, a PtSe2/MoS2 heterojunction was fabricated for a broadband photodetector operating within the range of visible to near-infrared. The device exhibited suppressed dark currents with a high rectification ratio of 104. The built-in electric field of the heterojunction promoted carrier separation effectively, and the device achieved excellent photoelectric performance with responsivities of 1.7 × 103, 27.52, and 21 mA/W at 635, 785, and 1550 nm wavelengths, respectively. Moreover, the specific detectivities (D*) were 2.2 × 1013 Jones (635 nm), 3.55 × 1011 Jones (785 nm), and 2.72 × 108 Jones (1550 nm). The device demonstrated a rise/fall time of 131/241 µs under 1550 nm laser illumination. Visible and near-infrared imaging detection was also demonstrated based on the heterojunction device at room temperature. This work sheds light on the remarkable potential of PtSe2/MoS2 heterojunctions in the domain of high-performance broadband photodetectors.

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Acknowledgements

This work was supported by National Key Research and Development Program (Grant No. 2021YFA0717600), National Natural Science Foundation of China (Grant Nos. 62121005, 62022081, 61974099, 62104226, 62204240), Natural Science Foundation of Jilin Province (Grant Nos. 20210101173JC, 20220508030RC), Changchun Key Research and Development Program (Grant No. 21ZY03), and Open Fund of State Key Laboratory of Applied Optics.

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Author notes

  1. Wang B and Yuan J have the same contribution to this work.

Authors and Affiliations

  1. State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, China

    Bin Wang, Mengqi Che, Mingxiu Liu, Yuting Zou, Junru An, Fan Tan, Yaru Shi, Nan Zhang, Liujian Qi & Shaojuan Li

  2. State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, China

    Jian Yuan

  3. University of Chinese Academy of Sciences, Beijing, 100049, China

    Bin Wang, Mengqi Che, Mingxiu Liu, Yuting Zou, Junru An, Fan Tan, Yaru Shi, Nan Zhang, Liujian Qi & Shaojuan Li

  4. School of Physics and Electronic Information, Huaibei Normal University, Huaibei, 235000, China

    Jian Yuan

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  1. Bin Wang
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Correspondence to Shaojuan Li.

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Supporting information Figures S1–S14, Table S1. The supporting information is available online at info.scichina.com and link.springer.com. The supporting materials are published as submitted, without typesetting or editing. The responsibility for scientific accuracy and content remains entirely with the authors.

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Wang, B., Yuan, J., Che, M. et al. High-performance broadband photodetector based on PtSe2/MoS2 heterojunction from visible to near-infrared region. Sci. China Inf. Sci. 67, 132401 (2024). https://doi.org/10.1007/s11432-023-3812-1

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  • DOI: https://doi.org/10.1007/s11432-023-3812-1

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