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Thin Film Growth of Germanium Selenides from PECVD of GeCl4 and Dimethyl Selenide

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An Erratum to this article was published on 30 January 2011

Abstract

Plasma enhanced chemical vapor deposition (PECVD) of germanium selenide thin films from germanium tetrachloride and dimethyl selenide was studied to determine the viability of these reagents for thin film deposition. Germanium tetrachloride and alkylselenides were selected as candidates for these reactions due to their lower toxicities and higher availabilities compared to the more typical substitutes: germane and hydrogen selenide in the formation of germanium selenides. Dimethyl selenide was used successfully for the deposition of germanium selenides. Variation in film stoichiometry was observed by the modification of reactant gas flow ratios. Relative mass flow rates were varied in order to determine their effect on germanium chalcogenide deposition, and the effect of these flow rate modifications on the film thickness, structural properties, and composition are reported.

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Acknowledgments

We would like to acknowledge Prof. Kristy Campbell of Boise State University and NASA Idaho EPSCoR Grant # NNX07AT60A for funding this part of the project along with NSF MRI Grant #BCS-0821783 for funding the purchase of the FEI Quanta FEG200 field emission SEM and Bruker AXS EDS system.

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Authors and Affiliations

  1. Department of Chemistry, Idaho State University, Stop 8023, Pocatello, ID, 83209, USA

    Patrick J. Whitham, Dennis P. Strommen, Lisa D. Lau & René G. Rodriguez

Authors
  1. Patrick J. Whitham
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  2. Dennis P. Strommen
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  3. Lisa D. Lau
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  4. René G. Rodriguez
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Corresponding author

Correspondence to René G. Rodriguez.

Additional information

An erratum to this article can be found at http://dx.doi.org/10.1007/s11090-011-9287-2

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Whitham, P.J., Strommen, D.P., Lau, L.D. et al. Thin Film Growth of Germanium Selenides from PECVD of GeCl4 and Dimethyl Selenide. Plasma Chem Plasma Process 31, 251–256 (2011). https://doi.org/10.1007/s11090-010-9278-8

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