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InGaAs/InP evanescently coupled one-sided junction waveguide photodiode design

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Abstract

An evanescently coupled one-sided junction waveguide photodiode (EC-OSJ-WGPD) is proposed and investigated numerically. The one-sided junction photodiode has a simple structure, while the characteristics of high speed and high output power are maintained. The designed EC-OSJ-WGPD with an absorption layer thickness of 350 nm achieves a bandwidth of 44.5 GHz and responsivity of 0.98 A/W. Comprehensive analyses of the EC-OSJ-WGPD are presented including photogeneration rate, internal optical power distribution, energy band diagram, internal electric field, photocurrent, and 3-dB bandwidth.

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Acknowledgements

This work has been worked by FRQNT team research project of Quebec.

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Authors and Affiliations

  1. iPhotonics Laboratories, Department of Electrical and Computer Engineering, Concordia University, Montreal, QC, H3G 1M8, Canada

    Jie Xu & Xiupu Zhang

  2. Department of Electrical and Computer Engineering, Concordia University, Montreal, QC, H3G 1M8, Canada

    Jie Xu & Ahmed Kishk

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  1. Jie Xu
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Appendix

Appendix

The parameters used in TCAD simulation are discussed in Xu et al. (2019a) and given in Tables 3 and 4. Basic models included in TCAD simulation are concentration-dependent lifetime model CONSRH, concentration-dependent mobility model ANALYTIC, parallel electric field dependent mobility model FLDMOB, Shockley–Read–Hall recombination minority carrier lifetime model SRH, and Auger recombination model AUGER.

Table 3 Material parameters used in the TCAD simulation
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Table 4 Mobility model parameters used in the TCAD simulation
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Xu, J., Zhang, X. & Kishk, A. InGaAs/InP evanescently coupled one-sided junction waveguide photodiode design. Opt Quant Electron 52, 266 (2020). https://doi.org/10.1007/s11082-020-02392-8

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