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Investigation of dependence the hole radius formed in InGaP on the group velocity, quality factor and defect band structures

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Abstract

In this paper, the structure being investigated consists of periodic layers of InGaP containing a defect region in air hole and GaAs. Finite difference time-domain calculations were performed to show the influences of hole radius on the group velocity (\( V_{g} \)), quality (\( Q \)) factor and transmission of the structure. As well as effect the hole radius deviation on the \( Q \) factor. Also, we will investigate property of the defect region on the band structures.

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  1. Erbil Technology Institute, Erbil Polytechnic University, Erbil, Kurdistan Region, Iraq

    Latef M. Ali & Farah A. Abed

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  1. Latef M. Ali
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  2. Farah A. Abed
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Correspondence to Latef M. Ali.

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Ali, L.M., Abed, F.A. Investigation of dependence the hole radius formed in InGaP on the group velocity, quality factor and defect band structures. Opt Quant Electron 50, 386 (2018). https://doi.org/10.1007/s11082-018-1629-3

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