Abstract
We report the growth kinetics of the 4He crystals with a small amount of 3He impurities around 0.8 K. The growth resistance was measured using the response of the charged interface with respect to an externally applied voltage. In 5 ppm and 10 ppm 3He mixtures, it is found that (1) the relaxation process can be expressed as an exponential behavior, (2) the growth resistance becomes larger compared to pure 4He and does not have a strong 3He concentration dependence, and (3) the temperature dependence of the growth resistance is much the same as pure 4He. We discuss several possible explanations of the present experiment.
Similar content being viewed by others
REFERENCES
J. Landau, S. G. Lipson, L. M. Maattanen, L. S. Balfour, and D. O. Edwards, Phys. Rev. Lett. 45, 31 (1980).
Y. Carmi, S. G. Lipson, and E. Poltruak, Phys. Rev. Lett. 54, 2042 (1985).
Y. Carmi, E. Polturak, and S. G. Lipson, Phys. Rev. Lett. 62, 1364 (1989).
M. J. Graf, R. M. Bowley, and H. J. Maris, Phys. Rev. Lett. 53, 1176 (1984); M. J. Graf, R. M. Bowley, and H. J. Maris, J. Low Temp. Phys. 58, 209 (1985).
C. L. Wang and G. Agnolet, J. Low Temp. Phys. 89, 795 (1992).
K. O. Keshishev and O. Andreeva, Excitations in Two-Dimensional and Three-Dimensional Quantum Fluids, Vol. 257, A. G. F. Wyatt and H. J. Lauter (Eds.), Plenum Press, New York (1991), p. 387.
E. Rolley, S. Balibar, C. Guthmann, and P. Nozieres, Physica B 210, 397 (1995).
A. F. Andreev and V. G. Knizhnik, Zh. Eksp. Teor. Fiz. 83, 416 (1982) [Sov. Phys. JETP 56, 226 (1982)].
R. M. Bowley and D. O. Edwards, J. Physique 44, 723 (1983).
B. Castaing, J. Physique Lett. 45, 233 (1984).
K. O. Keshishev, A. Ya Parshin, and A. B. Babkin, Zh. Eksp. Teor. Fiz. 80, 716 (1982) [Sov. Phys. JETP 53, 362 (1981)].
B. Castaing, S. Balibar, and C. Laroche, J. Physique 41, 897 (1980).
J. Bodensohn, J. Nicolai, and P. Leiderer, Z. Phys. B 64, 55 (1986).
S. N. Burmistrov and L. B. Dubovskii, Europhys. Lett. 24, 749 (1993). Their paper contains some typographical errors. The solid density ρ in Eq. (3) should be omitted.
P. Leiderer, Physica B 126, 92 (1984).
D. O, Edwards and S. Balibar, Phys. Rev. B 39, 4083 (1989).
T. P. Ptukha, Zh. Eksp. Teor. Fiz. 40, 1583 (1961) [Sov. Phys. JETP 13, 1112 (1961)].
G. A. Herzlinger and J. G. King, Phys. Lett. 40A, 65 (1972).
S. Balibar, D. O. Edwards, and W. F. Saam, J. Low Temp. Phys. 82, 119 (1991).
B. Bertman, H. A. Fairbank, C. W. White, and M. J. Crooks, Phys. Rev. 142, 74 (1966); B. Bertman, H. A. Fairbank, G. R. Guyer, and C. W. White, Phys. Rev. 142, 79 (1966).
B. M. Abraham, Y. Eckstein, J. B. Ketterson, M. Kuchnir, and P. R. Roach, Phys. Rev. A 1, 250 (1970).
R. J. Donnelly and P. H. Roberts, J. Low Temp. Phys. 27, 687 (1977).
P. E. Wolf, D. O. Edwards, and S. Balibar, J. Low Temp. Phys. 51, 489 (1982).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Suzuki, M., Thiel, M. & Leiderer, P. 3He Impurity Effects on the Growth Kinetics of 4He Crystals. J Low Temp Phys 109, 357–367 (1997). https://doi.org/10.1007/s10909-005-0090-4
Received:
Revised:
Issue Date:
DOI: https://doi.org/10.1007/s10909-005-0090-4