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High dielectric response of TaOX thin film and its modification by controlling oxygen vacancy concentration

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Abstract

How to prepare a high-k gate dielectric to replace SiO2 by a simple fabrication process compatible with standard CMOS technology is always a hot and difficult issue. In this work, high dielectric constants of 2919.5 at 100 Hz have been found in the non-stoichiometric TaOX thin film with abundant oxygen vacancies, which was deposited by using a mixed gas atmosphere with Ar of 20 SCCM and O of 2 SCCM. More impressively, the dielectric constants of TaOX thin film can be intentionally modulated by adjusting oxygen vacancy concentration, and the oxygen vacancy concentration of the TaOX thin film was controlled by choosing different oxygen atmosphere concentrations during chemical vapor deposition. Due to the polarization induced by oxygen vacancies, the dielectric constants of TaOX thin film was far higher than the dielectric constant of 29.4 of Ta2O5 thin film. This work demonstrates the possibility of obtaining the high dielectric response and adjusting the permittivity for metal oxide thin film.

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Acknowledgements

This work was supported by the Guangdong Science and Technology Plan (Grant No. 2022A0505020022), the youth project of Guangdong Foshan joint fund of Guangdong Natural Science Foundation (Grant No. 2020A1515110601), the Natural Science Foundation of China (Grant No. 62006042), and the youth project of Guangdong Foshan joint fund of Guangdong Natural Science Foundation (Grant No. 2019A1515110444).

Funding

This work was supported by the Guangdong Science and Technology Plan (Grant No. 2022A0505020022), the youth project of Guangdong Foshan joint fund of Guangdong Natural Science Foundation (Grant No. 2020A1515110601), the Natural Science Foundation of China (Grant No. 62006042), and the youth project of Guangdong Foshan joint fund of Guangdong Natural Science Foundation (Grant No. 2019A1515110444).

Author information

Authors and Affiliations

  1. School of Electronic and Information Engineering, Foshan University, Foshan, People’s Republic of China

    Qingfeng Cai, Jianwen Chen, Guo Niu, Shaopeng Zhou & Xinmei Yu

  2. School of Physics and Optoelectronic Engineering, Foshan University, Foshan, People’s Republic of China

    Si Liu & Peng Xiao

  3. School of Materials Science and Hydrogen Energy, Foshan University, Foshan, People’s Republic of China

    Xiucai Wang

  4. School of Mechatronics Engineering and Automation College, Foshan University, Foshan, People’s Republic of China

    Wenbo Zhu

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  1. Qingfeng Cai
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  5. Shaopeng Zhou
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Contributions

Investigation, data curation, formal analysis and writing-original draft [QC]; Supervision [JC; GN]; Writing-review [SL; SZ]; Conceptualization [XW; WZ; XY and PX]; All authors read and approved the final manuscript.

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Correspondence to Jianwen Chen or Si Liu.

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Cai, Q., Chen, J., Liu, S. et al. High dielectric response of TaOX thin film and its modification by controlling oxygen vacancy concentration. J Mater Sci: Mater Electron 34, 969 (2023). https://doi.org/10.1007/s10854-023-10419-5

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