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Effect of Oxygen Pressure on Electrical Property of a-SZTO Thin Film Transistor

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Abstract

Amorphous Si–Zn–Sn–O (a-SZTO) thin film transistors were fabricated using RF magnetron sputtering at different oxygen partial pressures to investigate how oxygen affects the electrical properties and negative bias thermal stress in the a-SZTO channel. The threshold voltage (Vth) and subthreshold slope increased from 5.49 to 10.21 V and from 0.59 to 0.71 V/decade, respectively as the oxygen pressure was increased. Contrarily, field effect mobility (μFE) decreased from 18.259 to 11.521 cm2/Vs. It was observed that the increase in the oxygen partial pressure changed the electrical performance of the devices, including the Vth, μFE, and on current (Ion), mainly due to the decrease in oxygen vacancies. The stability of the device was observed to be enhanced after increasing the oxygen pressure, mainly because there were fewer oxygen vacancies acting as traps.

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Authors and Affiliations

  1. Department of Semiconductor Engineering, Cheongju University, Cheongju, 28503, South Korea

    Ji Ye Lee & Sang Yeol Lee

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  1. Ji Ye Lee
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  2. Sang Yeol Lee
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Correspondence to Sang Yeol Lee.

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Lee, J.Y., Lee, S.Y. Effect of Oxygen Pressure on Electrical Property of a-SZTO Thin Film Transistor. Trans. Electr. Electron. Mater. 19, 423–427 (2018). https://doi.org/10.1007/s42341-018-0065-1

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  • DOI: https://doi.org/10.1007/s42341-018-0065-1

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