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Recent advances in field-effect transistors for heavy metal ion detection

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Abstract

Water is an essential requirement for human livelihood, but drinkable water becomes more insufficient due to its limited accessibility and continual contamination. Heavy metal ions (HMIs) are considered as highly nocuous and nonbiodegradable carcinogens that contaminate groundwater resources and then cause serious diseases. Hence, it is necessary to develop and improve nanoscale HMI detection approaches in aqueous systems with high sensitivity, selectivity, real-time and accuracy. This review introduces the hazardous effect of HMIs on living organisms and focuses on the latest advances in HMI detection with semiconductor materials and the corresponding field-effect transistor (FET) sensors, including two-dimensional FETs, organic FETs, ion-selective FETs, and high electron mobility transistors (HEMTs). Finally, the concluded mechanism of HMI detection is described, and the outlook concerning to the research direction of HMIs detection by FET sensors is presented.

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Fig. 1
Fig. 2

Copyright 2011 American Chemical Society. e Microcontroller-based portable capacitance measurement system controlled by pulse. f Real-time Pb2+ testing results by the measurement system. g Typical real-time transient data for the selectivity test for Hg2+ and mixed ion measurements. h Comparison of the response% of Pb2+ (2.5 ppb) with other individual and mixed metal cations (10 ppb). Adapted with permission from [93]. Copyright 2017 American Chemical Society. i Schematic diagram of the TGA-AuNP/rGO hybrid sensor. j Its dynamic response for Hg2+ ions. Adapted with permission from [94]. Copyright 2012 American Chemical Society

Fig. 3

Copyright 2021 American Chemical Society. d Scheme of an SGGT with the Fe–N–C SAE&Cs/Au-modified gate electrode for the detection of Hg2+ ions. e Dynamic response of the modified SGGT for Hg2+ ions. f Response of selectivity of SGGT with a modified gate electrode. Adapted with permission from [97]. Copyright 2020 American Chemical Society. g Schematic of the rGO FET sensor with GSH modification of Au NPs for the formation of distinct recognition groups to recognize Pb2+ ions. h The detection of Pb2+ in drinking water in real time. i The corresponding dynamic response. Adapted with permission from [8]. Copyright 2014 American Chemical Society

Fig. 4

Copyright 2016 American Chemical Society. d MoS2 sensors functionalized with ionophores. e Optical microscope image of a MoS2 sensor on a PET substrate, scale bar: 10 μm. f The response of MoS2 can be effectively tuned by stain application. g Responses of 4 different MoS2 sensors to 5 μg/mL Na+, Hg2+, Pb2+, and Cd2+ Reproduced with permission from Ref. [109]. Copyright 2019, Elsevier

Fig. 5

Reproduced with permission from Ref. [149]. Copyright 2019, Elsevier

Fig. 6

Reproduced with permission from Ref. [165]. Copyright 2004, Elsevier. d Schematic diagram of the GaN-capped ISFET sensor cross-section with a decorated membrane. e Schematic diagram of the device assembled by the terminals and membrane. f An increase in the channel (2DEG) density caused by Hg2+ ions captured by ionophores. g Diagram of the equilibrium sensor response versus Hg2+ concentration when adding Hg(NO3)2 solution. Reproduced with permission from Ref. [169]. Copyright 2019, Elsevier

Fig. 7
Fig. 8

Reproduced with permission from Ref. [152]. Copyright 2019, Elsevier

Fig. 9

Copyright 2017 American Chemical Society

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Data sharing is not applicable to this review as no datasheets were generated and analysed during the current study.

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Acknowledgements

This work was supported by the National Natural Science Foundation of China (61975241, 52173192) and by the Huxiang Youth Talent Program of Hunan Province (2020RC3010). J.L. Yang also thanks the support from the National Key Research and Development Program of China (No. 2017YFA0206600), the Science and Technology Innovation Program of Hunan Province (No. 2020RC4004), and the Special Funding for the Construction of Innovative Provinces in Hunan Province (No. 2020GK2024).

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Authors and Affiliations

  1. Hunan Key Laboratory for Super-Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan, 410083, People’s Republic of China

    Gengming Zhang, Shenglan Yang, Xiaofang Shi, Yunchao Xu, Chenxing Jin, Jia Sun & Junliang Yang

  2. Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan, 410083, People’s Republic of China

    Gengming Zhang, Shenglan Yang, Xiaofang Shi, Yunchao Xu, Chenxing Jin, Jia Sun & Junliang Yang

Authors
  1. Gengming Zhang
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  2. Shenglan Yang
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  3. Xiaofang Shi
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  4. Yunchao Xu
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  5. Chenxing Jin
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  6. Jia Sun
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  7. Junliang Yang
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Contributions

The first draft of the manuscript was written by GZ and all authors commented on previous versions of the manuscript. All authors read and approved the final manuscript.

Corresponding author

Correspondence to Jia Sun.

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Zhang, G., Yang, S., Shi, X. et al. Recent advances in field-effect transistors for heavy metal ion detection. J Mater Sci: Mater Electron 33, 15965–15991 (2022). https://doi.org/10.1007/s10854-022-08510-4

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  • DOI: https://doi.org/10.1007/s10854-022-08510-4

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