Abstract
The creep performance of phase-inhomogeneous Cu/Sn–58Bi/Cu solder joints under current stressing with increasing electric current density (0 A/cm2, 5.0 × 103 A/cm2, 6.0 × 103 A/cm2, and 7.0 × 103 A/cm2) was investigated. The results show that the steady-state creep rate of solder joints increases with the increase in current density, stress, and temperature, while it is reversed for the creep lifetime. In addition, the stress exponent of the solder joint decreases linearly with the current density. The material constant in creep constitutive model and the creep activation energy of solder joint decrease with the square of current density. The stress exponent (5.68–3.26) and creep activation energy (98.77–52.04 kJ/mol) indicate that the creep mechanism is dominated by dislocation climb, and the creep mechanism of the solder joint without current stressing is controlled by self-lattice diffusion, while it is gradually replaced by dislocation pipe diffusion with increasing current density. Accordingly, a modified Norton power law creep model considering the effect of electric current stressing on material constant, stress exponent, and creep activation energy is obtained. Moreover, as the current density and temperature increase, the fracture position of solder joints transfers from the solder matrix to the interface between solder matrix and IMC layer, and the fracture mode changes from ductile fracture to ductile–brittle mixed fracture.
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References
P. Lall, D. Zhang, V. Yadav, D. Locker, Microelectron. Reliab. 62, 4 (2016)
L. Yang, J.G. Ge, Y.C. Zhang, J. Dai, H.X. Liu, J.C. Xiang, J. Electron. Mater. 45, 3766 (2016)
W.Y. Li, H.B. Qin, M.B. Zhou, X.P. Zhang, J. Mech. Eng. 52, 46 (2016)
J. Cadek, Creep in metallic materials (Springer, Czechoslovakia, 1988)
F.Z. Xuan, S.S. Shao, Q.Q. Chen, Microelectron. Reliab. 51, 2336 (2011)
G.F. Zhao, F.Q. Yang, Mater. Sci. Eng. A 591, 97 (2014)
F. Su, R.H. Mao, X.Y. Wang, G.Z. Wang, H.Y. Pan, Microelectron. Reliab. 51, 1020 (2011)
R. Chen, F.Q. Yang, J. Electron. Mater. 39, 2611 (2010)
R. Chen, F.Q. Yang, J. Phys. D Appl. Phys. 41, 155406 (2008)
X. Long, W.B. Tang, M.F. Xu, L.M. Keer, Y. Yao, J. Mater. Sci. 53, 6219 (2018)
W.Y. Li, H. Jin, W. Yue, M.Y. Tan, X.P. Zhang, J. Mater. Sci. Mater. Electron. 27, 13022 (2016)
W.K. Le, J.Y. Zhou, C.B. Ke, M.B. Zhou, X.P. Zhang, J. Mater. Sci. Mater. Electron. 31, 15575 (2020)
L.M. Ma, Y. Zuo, F. Guo, Y.T. Shu, J. Mater. Res. 29, 2738 (2014)
Y. Zuo, L.M. Ma, F. Guo, L. Qiao, Y.T. Shu, A. Lee, K.N. Subramanian, J. Electro. Mater. 43, 4395 (2014)
C. Kinney, J.W. Morris, T.K. Lee, K.C. Liu, J. Xue, D. Towne, J. Electron. Mater. 38, 221 (2009)
C. Kinney, T.K. Lee, K.C. Liu, J.W. Morris, J. Electron. Mater. 38, 2585 (2009)
A. Rusinko, P. Varga, Acta Polytech. Hungarica 16, 185 (2019)
S.S. Shao, F.Q. Yang, F.Z. Xuan, Inter. J. Appl. Electron. Mech 40, 165 (2012)
F. Ren, J.W. Nah, K.N. Tu, B.S. Xiong, L.H. Xu, J.H.L. Pang, Appl. Phys. Lett. 89, 141914 (2006)
L. Yang, H.X. Liu, Y.C. Zhang, J. Electron. Mater. 47, 662 (2018)
L. Shen, P. Septiwerdani, Z. Chen, Mater. Sci. Eng. A 538, 253 (2012)
T.H. Chen, C.M. Chen, J. Mater. Res. 21, 962 (2006)
F.J. Wang, L.T. Liu, D.Y. Li, M.F. Wu, J. Mater. Sci. Mater. Electron. 29, 21157 (2018)
T. Siewert, S. Liu, D.R. Smith, J.C. Madeni, Database for Solder Properties with Emphasis on New Lead-Free Solders (Colorado School of Mines, Colorado, 2002)
H.B. Qin, T.H. Liu, W.Y. Li, W. Yue, D.G. Yang, Microelectron. Reliab. 115, 113995 (2020)
Y. Yao, J. Fry, M.E. Fine, L.M. Keer, Acta Mater. 61, 1525 (2013)
T. An, F. Qin, J.G. Li, Microelectron. Reliab. 51, 1011 (2011)
V.M.F. Marques, C. Johnston, P.S. Grant, Acta Mater. 61, 2460 (2013)
S. Lotfian, J.M. Molina-Aldareguia, K.E. Yazzie, J. Llorca, N. Chawla, J. Electron. Mater. 42(6), 1085–1091 (2013)
H. Tanaka, L.F. Qun, O. Munekata, T. Taguchi, T. Narita, Mater. Trans. 46, 1271 (2005)
Y.A. Shen, S.Q. Zhou, J.H. Li, K.N. Tu, H. Nishikawa, Mater. Des. 166, 107619 (2019)
E. Cadirli, H. Kaya, A. Gumus, I. Yilmazer, J. Mater. Eng. Perform. 15, 490 (2006)
H. Mehrer, Diffusion in Solids: Fundamentals, Methods, Materials, Diffusion-Controlled Processes (Springer, New York, 2007)
P.S. Ho, T. Kwok, Rep. Prog. Phys. 52, 301 (1989)
Z. Suo, Acta Metall. Mater. 42, 3581 (1994)
R.M. Niu, J. Zhang, Z.J. Wang, G. Liu, G.J. Zhang, X.D. Ding, J. Sun, Appl. Plys. A 97, 369 (2009)
C.H. Pei, Z.X. Li, Q.B. Fan, X. Huang, Mater. Res. Innov. 18, 198 (2014)
L.Y. Zhang, S.Q. Ou, J.N. Huang, K.N. Tu, Appl. Plys. Lett. 88, 012106 (2006)
M. Meraj, N. Yedla, S. Pal, Mater. Lett. 169, 265 (2016)
H.C. Huang, K.L. Lin, A.T. Wu, J. Appl. Phys. 119, 115102 (2016)
B.R. Livesay, N.E. Donlin, A.K. Garrison, H.M. Harris, J.L. Hubbard, 30th Annu. Pro. Reliab. Phys. 217 (1992)
X.P. Zhang, L.M. Yin, C.B. Yu, J. Mater. Sci. Mater. Electron. 19, 393 (2008)
X.P. Zhang, C.B. Yu, S. Shrestha, L. Dorn, J. Mater. Sci. Mater. Electron. 18, 665 (2007)
H.L. Peynolds, Creep of Two-Phase Microstructure for Microelectronic Applications (University of California, Berkeley, 1998)
M.D. Mathew, H. Yang, S. Movva, K.L. Murty, Metall. Mater. Trans. A 36, 99 (2005)
W.Y. Li, S.S. Cao, X.P. Zhang, 17th Inter. Con. Electron. Pack. Tech. 988 (2016)
W.Y. Li, X.P. Zhang, H.B. Qin, Y.W. Mai, Microelectron. Reliab. 82, 224 (2018)
Funding
This research was funded by the Science and Technology Planning Project of Guangxi Province under Grant No. GuiKeAD20297022, National Natural Science Foundation of China under Grant Nos. 51805103 and 52065015, Natural Science Foundation of Guangxi Province under Grant No. 2021GXNSFAA075010, Director Fund Project of Guangxi Key Laboratory of Manufacturing System and Advanced Manufacturing Technology No. 20-065-40-003Z, Self-Topic Fund of Engineering Research Center of Electronic Information Materials and Devices No. EIMD-AB202005, Science and Technology Plan Project of Liudong New District under Grant No. Liudongkegong20210106, and Innovation Project of Guangxi Graduate Education Nos. YCSW2021184 and JGY2021084.
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XL: Investigation, Methodology, Formal analysis, Data curation, Writing—original draft. JW: Methodology, Formal analysis, Data curation. HQ: Conceptualization, Formal analysis. SH: Writing—review & editing. WL: Conceptualization, Methodology, Formal analysis, Data curation, Writing—review & editing. SW: Conceptualization, Methodology, Writing—review & editing.
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Li, X., Wang, J., Qin, H. et al. Creep performance of phase-inhomogeneous Cu/Sn–58Bi/Cu solder joints with increasing current density. J Mater Sci: Mater Electron 33, 16167–16182 (2022). https://doi.org/10.1007/s10854-022-08507-z
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DOI: https://doi.org/10.1007/s10854-022-08507-z