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Investigation of electrical and photovoltaic properties of Au/n-Si Schottky diode with BOD-Z-EN interlayer

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Abstract

4,4-Difluoro-4-bora-3a,4a-diaza-s-indacene (BODIPY) based BOD-Z-EN compound was used as an interfacial organic layer to fabrication of Au/BOD-Z-EN/n-Si/In diode. The electrical parameters of Au/BOD-Z-EN/n-Si/In diode such as ideality factor (n), barrier height (Φb) and series resistance (Rs) have been investigated through current–voltage (I–V) studies at dark and under various illumination intensities to understand the effect of interlayer on the device properties. The values found for the n varied from 2.33 to 1.55 and the Φb ranged from 0.86 to 0.90 eV as the illumination condition changed from dark to 100 mW/cm2. Series resistance (Rs) values calculated using Cheung’s method were found to decrease with increasing illumination level. The forward bias I–V characteristics of the diode were explained by the space charge limited current theory. The main photovoltaic parameters such as open circuit voltage (Voc), short circuit current density (Jsc) and fill factor (FF) were determined for various light intensity. The Au/BOD-Z-EN/n-Si/In diode exhibits a photovoltaic behavior with a Voc of 150 mV and Jsc of 10 µA/cm2 under 100 mw/cm2. In addition, photosensitivity and photoresponsivity properties of the diode were determined. All these results indicate that Au/BOD-Z-EN/n-Si/In device can be used as photosensor in optoelectronic applications.

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Acknowledgements

The authors would like to thank Dr. Halil GÖKCE from Giresun University for his help in discussion of computational studies.

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Authors and Affiliations

  1. Department of Energy Systems Engineering, Giresun University, Giresun, Turkey

    Ali Osman Tezcan, Serkan Eymur & Nihat Tuğluoğlu

  2. Vocational School of Health Services, Giresun University, Giresun, Turkey

    Enis Taşcı

  3. Department of Photonics, İzmir Institute of Technology, İzmir, Turkey

    Mustafa Emrullahoğlu

Authors
  1. Ali Osman Tezcan
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  2. Serkan Eymur
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  3. Enis Taşcı
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  4. Mustafa Emrullahoğlu
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  5. Nihat Tuğluoğlu
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Correspondence to Nihat Tuğluoğlu.

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Tezcan, A.O., Eymur, S., Taşcı, E. et al. Investigation of electrical and photovoltaic properties of Au/n-Si Schottky diode with BOD-Z-EN interlayer. J Mater Sci: Mater Electron 32, 12513–12520 (2021). https://doi.org/10.1007/s10854-021-05886-7

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  • DOI: https://doi.org/10.1007/s10854-021-05886-7

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