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Fabrication, illumination dependent electrical and photovoltaic properties of Au/BOD-Pyr/n-Si/In schottky diode

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Abstract

4,4-Difluoro-4-bora-3a,4a-diaza-s-indacene (BODIPY)-based BOD-Pyr compound was synthesized according to the literature and HOMO and LUMO energies of the BOD-Pyr were calculated by DFT/B3LYP/6-311G(d,p) method using on Gaussian 09 W. Au/BOD-Pyr/n-Si/In Schottky diode were fabricated using thermal evaporation and spin coating technique. The electronic and photovoltaic properties of Au/BOD-Pyr/n-Si/In diode have been investigated by current-voltage (I-V) measurements at dark and under various illumination intensities. The calculated ideality factor and barrier height of the diode in dark were found to be 2.84 and 0.75 eV, respectively. These parameters were also obtained under 100 mW/cm2 illumination level as 1.55 and 0.87 eV, respectively. The values of open-circuit voltage and short circuit current density were obtained as 0.26 V and 0.56 mA/cm2 under the illumination level of 100 mW/cm2. These all findings suggest that Au/BOD-Pyr/n-Si/In diode can be used as photodiode in optoelectronic applications.

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Acknowledgements

The authors would like to thank Dr. Halil GÖKCE from Giresun University for his help in discussion of computational studies.

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Authors and Affiliations

  1. Department of Energy Systems Engineering, Giresun University, Giresun, Turkey

    Onur Ongun, Nihat Tuğluoğlu & Serkan Eymur

  2. Vocational School of Health Services, Giresun University, Giresun, Turkey

    Enis Taşcı

  3. Department of Photonics, The İzmir Institute of Technology, İzmir, Turkey

    Mustafa Emrullahoğlu

  4. Department of Physics, Selçuk University, Konya, Turkey

    Ümmühan Akın

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  1. Onur Ongun
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Ongun, O., Taşcı, E., Emrullahoğlu, M. et al. Fabrication, illumination dependent electrical and photovoltaic properties of Au/BOD-Pyr/n-Si/In schottky diode. J Mater Sci: Mater Electron 32, 15707–15717 (2021). https://doi.org/10.1007/s10854-021-06122-y

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