Abstract
The effect of plasmon–phonon interaction on the vibrational properties of the MgxZn1-xO films on anisotropic substrate is studied versus Mg content (x), film thickness (0.5–20 μm), free carrier concentration (1×1016–5×1018 cm−3) and damping coefficients using infrared reflection spectroscopy. The mathematical model with additive and phenomenological contribution of several oscillators to dielectric permittivity of MgxZn1-xO material was developed. The infrared reflection spectra were simulated in the range of “residual rays” of the film and the substrate for MgxZn1-xO/Al2O3 structures using self-consisted parameters of bulk ZnO, MgO and Al2O3 materials. Based on the Kramers–Kronig relationship, the frequency range where film reflectivity is sensitive to the variation of film doping and thickness was determined. The frequencies and damping coefficients of TO and LO modes of the oscillators, static and high-frequency dielectric permittivity for orientation E⊥c were obtained with high accuracy. Main attention was paid to the compositions which were in hexagonal structure. Experimental infrared reflection spectra were recorded for the films with x = 0.25 additionally doped with manganese and their simulation was performed based on the model developed. The free carrier concentration and mobility as well as film conductivity were determined. The results obtained showed the utility of infrared reflection spectroscopy for the investigation of textured alloy films. This non-destructive and contactless method can be implemented for the determination of optical properties of other semiconductor films.
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References
M. Born, K. Huang, Dynamical theory of crystal lattices (Oxford University Press, Oxford, 1954), p. 420
YuI Uhanov, Optical properties of semiconductors (Nauka, Moscow, 1977), p. 368
R. Matz, H. Lüth, Conduction-band surface plasmons in the electron-energy-loss spectrum of GaAs(110). Phys. Rev. Lett. 46, 500–503 (1981)
V.M. Polyakov, A. Elbe, J.A. Schaefer, High-resolution electron energy-loss spectroscopy at epitaxially grown GaAs (100). Appl. Phys. A 60, 567–572 (1995)
E.F. Venger, S.M. Davidenko, A.V. Melnichuk, L.Yu. Melnichuk, Yu.A. Pasechnik, Effect of the plasmon-phonon coupling anisotropy on the reflection coefficient of polar semiconductors ZnO and SiC-6H, Proc. of the Third International EuroConference on Advanced Semiconducotr Devices and Microsystems (ASDAM-2000), Smolenice, Slovakia, October, 16–18, 2000, p. 343–346
A.-M. Husanu, Electron–phonon interaction in zinc oxide. Plasmon–optical phonon coupled modes. Phys. Stat. Sol. B 246, 87–91 (2009)
A.V. Melnichuk, LYu. Melnichuk, YuA Pasechnik, Surface plasmon–phonon polaritons of hexagonal zinc oxide. Tech. Phys. 43, 52–55 (1998). https://doi.org/10.1134/1.1258935
E.F. Venger, L.Yu. Melnichuk, O.V. Melnichuk, T.V. Shovkoplyas, Guided-wave polaritons in ZnO/6H-SiC structures, Proc. SPIE 5507, XVI International conference on spectroscopy of molecules and crystals, (20 July 2004); https://doi.org/10.1117/12.569812
K. Kloeckner, M. Himmerlich, R.J. Koch, V.M. Polyakov, A. Eisenhardt, T. Haensel, S.I.-U. Ahmed, S. Krischok, J.A. Schaefer, Electron phonon plasmon interaction in MBE-grown indium nitride—a high resolution electron energy loss spectroscopy (HREELS) study. Phys. Stat. Sol. C 7, 173–176 (2010)
M. Schubert, A. Mock, R. Korlacki, S. Knight, Z. Galazka, G. Wagner, V. Wheeler, M. Tadjer, K. Goto, V. Darakchieva, Longitudinal phonon plasmon mode coupling in β-Ga2O3. Appl. Phys. Lett. 114, 102102 (2019)
I. Markevich, L. Borkovska, Y. Venger, N. Korsunska, V. Kushnirenko, O. Melnichuk, L. Melnichuk, L. Khomenkova, Electrical, optical and luminescent properties of zinc oxide single crystals. Ukr. J. Phys. Rev. 13, 57–76 (2018)
J.A.A. Engelbrecht, K.T. Roro, R. Swanepoel, Infrared characterization of ZnO films on Si substrates. Phys. Stat. Sol. C 5, 566–568 (2008)
A.V. Melnichuk, Optical and electrophysical properties of thin doped ZnO/SiC 6H films from the IR reflection spectra. Ukr. J. Phys. 43, 1310–1315 (1998)
O. Melnichuk, L. Melnichuk, B. Tsykaniuk, Z. Tsybrii, P. Lytvyn, C. Guillaume, X. Portier, V. Strelchuk, Y. Venger, L. Khomenkova, N. Korsunska, Investigation of zinc oxide thin films grown using ALD by the methods of IR spectroscopy. Ukr. J. Phys. 61, 1053–1060 (2016)
Ü. Özgür, Ya.I. Alivov, C. Liu, A. Teke, M.A. Reshchikov, S. Doğan, V. Avrutin, S.-J. Cho, H. Morkoç, A comprehensive review of ZnO materials and devices. J. Appl. Phys. 98, 041301 (2005)
S. Gieraltowska, L. Wachinski, B.S. Witkowski, M. Godlewski, E. Guziewicz, Atomic layer deposition grown composite dielectric oxides and ZnO for transparent electronic applications. Thin Solid Films 520, 4694–4697 (2012)
E. Fortunato, P. Barquinha, A. Pimentel, A. Gonc¸alves, A. Marques, L. Pereira, R. Martins, Recent advances in ZnO transparent thin film transistors. Thin Solid Films 487, 205–211 (2005)
K. Ellmer, A. Klein, B. Rech, Transparent conductive zinc oxide: Basics and applications in thin film solar cells (Springer, New York, 2008), p. 446
Th Gruber, C. Kirchner, R. Kling, F. Reuss, A. Waag, ZnMgO epilayers and ZnO–ZnMgO quantum wells for optoelectronic applications in the blue and UV spectral region. Appl. Phys. Lett. 84, 5359–5361 (2004)
A. Ohtomo, K. Tamura, M. Kawasaki, T. Makino, Y. Segawa, Z.K. Tang, L.G.K. Wong, Y. Matsumoto, H. Koinuma, Room-temperature stimulated emission of excitons in ZnO/(Mg, Zn)O superlattices. Appl. Phys. Lett. 77, 2204–2206 (2000)
Y. Jin, B. Zhang, Y. Shuming, Y. Wang, J. Chen, H. Zhang, C. Huang, C. Cao, H. Cao, R.P.H. Chang, Room temperature UV emission of MgxZn1−xO films. Solid State Commun. 119, 409 (2001)
T. Takagi, H. Tanaka, S. Fujita, S. Fujita, Molecular beam epitaxy of high magnesium content single-phase wurzite MgxZn1-xO alloys (x~0.5) and their application to solar-blind region photodetectors. Jpn. J. Appl. Phys. 42, L401–L403 (2003)
D. Thapa, J. Huso, J. Lapp, N. Rajabi, J.L. Morrison, M.D. McCluskey, L. Bergman, Thermal stability of ultra-wide-bandgap MgZnO alloys with wurtzite structure. J. Mater. Sci. 29, 16782–16790 (2018)
I. Markevich, T. Stara, L. Khomenkova, V. Kushnirenko, L. Borkovska, Photoluminescence engineering in polycrystalline ZnO and ZnO-based compounds. AIMS Mater. Sci. 3, 508–524 (2016)
L. Borkovska, L. Khomenkova, I. Markevich, M. Osipyonok, O. Kolomys, S. Rarata, O. Oberemok, O. Gudymenko, A. Kryvko, V. Strelchuk, The effect of high temperature annealing on the photoluminescence of ZnMgO alloys. Phys. Status Solidi A 215, 1800250 (2018)
A. Kaushal, D. Kaur, Effect of Mg content on structural, elecrical and optical properties of Zn1-xMgxO nanocomposite thin films. Solar Energy Mater. Solar Cells 93, 193–198 (2009)
J. Chen, W.Z. Shen, Long-wavelength optical phonon properties of ternary MgZnO thin films. Appl. Phys. Lett. 83, 2154–2156 (2003)
A. Ohtomo, M. Kawasaki, Y. Sakurai, T. Yasuba, MgxZn1−xO as a II–VI widegap semiconductor alloy. Appl. Phys. Lett. 72, 2466–2468 (1998)
Ye.F. Venger, O.V. Melnichuk, Yu.A. Pasichnyk, Spectroscopy of residual rays, Naukova dumka, Kyiv, 2001, 192 p. (in Ukrainian)
N. Korsunska, L. Borkovska, Yu. Polischuk, O. Kolomys, P. Lytvyn, I. Markevich, V. Strelchuk, V. Kladko, O. Melnichuk, L. Melnichuk, L. Khomenkova, C. Guillaume, X. Portier, Photoluminescence, conductivity and structural study of terbium doped ZnO films grown on different substrates. Mater. Sci. Semicon. Proc. 94, 51–56 (2019)
O. Melnichuk, L. Melnichuk, B. Tsykaniuk, Z. Tsybrii, P. Lytvyn, C. Guillaume, X. Portier, V. Strelchuk, Ye. Venger, L. Khomenkova, N. Korsunska, Investigation of undoped and Tb-doped ZnO films on Al2O3 substrate by infrared reflection method. Thin Solid Films 673, 136–140 (2019)
C. Bundesmann, A. Rahm, M. Lorenz, M. Grundmann, Infrared optical properties of MgxZn1-xO thin films (0 ≤ x≤1): long-wavelength optical phonons and dielectric constants. J. Appl. Phys. 99, 113504 (2006)
E.F. Venger, I.V. Venger, N.O. Korsunska, L.Y. Melnichuk, O.V. Melnichuk, L.Y. Khomenkova, Optical properties of ternary alloys MgZnO in infrared spectrum. Semicond. Phys. Quantum Electron. Optoelectron. 21, 417–423 (2018)
R.H. Lyddane, R.G. Sachs, E. Teller, On the polar vibrations of alkali halides. Phys. Rev. 59, 673–676 (1941)
L. Khomenkova, X. Portier, J. Cardin, F. Gourbilleau, Thermal stability of high-k Si-rich HfO2 layers grown by RF magnetron sputtering. Nanotechnology 21, 285707 (2010)
L. Khomenkova, N. Korsunska, C. Labbe, X. Portier, F. Gourbilleau, The peculiarities of structural and optical properties of HfO2-based films co-doped with silicon and erbium. Appl. Surf. Sci. 471, 521–527 (2019)
V. Romanyuk, N. Dmitruk, V. Karpyna, G. Lashkarev, V. Popovych, M. Dranchuk, R. Pietruszka, M. Godlewski, G. Dovbeshko, I. Timofeeva, O. Kondratenko, M. Taborska, A. Ievtushenko, Optical and electrical properties of highly doped ZnO: al films deposited by atomic layer deposition on si substrates in visible and near infrared region. Acta Phys. Polonica. 129, A36–A40 (2016)
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This work was partly supported by the Ministry of Education and Science of Ukraine (Project 89452).
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Melnichuk, O., Melnichuk, L., Venger, Y. et al. Effect of plasmon–phonon interaction on the infrared reflection spectra of MgxZn1-xO/Al2O3 structures. J Mater Sci: Mater Electron 31, 7539–7546 (2020). https://doi.org/10.1007/s10854-020-03110-6
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DOI: https://doi.org/10.1007/s10854-020-03110-6