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Microstructure and electrical properties of tantalum doped (Ba0.85Ca0.15)(Zr0.10Ti0.90)O3 ceramics

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Abstract

(Ba0.85Ca0.15)(Zr0.10Ti0.90)1−x Ta x O3 ceramics (BCZTT, 0 ≤ x ≤ 3.0 mol%) were prepared via a conventional solid-state reaction method, and the effect of Ta substitution on the microstructure and electrical properties of the BCZTT ceramics was investigated. A pure perovskite structure was obtained in all of these samples. The microstructure of the BCZT ceramics is strongly affected by Ta doping. Low-concentration Ta addition (x = 0.1 mol%) promotes the grain growth of the BCZT ceramics. However, high-concentration Ta addition (x > 0.5 mol%) effectively hinders the grain growth. The dielectric, ferroelectric and piezoelectric properties of the BCZT ceramics are improved by addition of a small amount of Ta. For the ceramics with x = 0.3 mol%, electrical performance reaches optimum: ε max = 7,770, T max (the temperature of the dielectric maximum) = 101.8 °C, P max = 17.9 μC/cm2, P r = 9.1 μC/cm2, E c = 0.54 kV/mm and d 33 = 303 pC/N. The T max of the BCZTT decreases with the increasing Ta concentration. The relaxor properties of undoped and Ta-doped BCZT ceramics were depicted, and the diffusivity increases with the increasing Ta contents.

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Acknowledgments

This work was supported by the National Natural Science Foundation of China under Grant No. 61176010 and No. 61172027, Guangdong Natural Science Foundation, the Research Foundation of IARC-SYSU under Grant No. IARC 2014-09.

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Authors and Affiliations

  1. State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou, 510275, People’s Republic of China

    Donghui Zhang, Yueli Zhang & Shenghong Yang

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  1. Donghui Zhang
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  2. Yueli Zhang
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  3. Shenghong Yang
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Correspondence to Yueli Zhang.

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Zhang, D., Zhang, Y. & Yang, S. Microstructure and electrical properties of tantalum doped (Ba0.85Ca0.15)(Zr0.10Ti0.90)O3 ceramics. J Mater Sci: Mater Electron 26, 909–915 (2015). https://doi.org/10.1007/s10854-014-2481-2

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  • DOI: https://doi.org/10.1007/s10854-014-2481-2

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