Abstract:
We study the thermoelectric transport properties in the three-dimensional Anderson model of localization near the metal-insulator transition (MIT). In particular, we investigate the dependence of the thermoelectric power S, the thermal conductivity K, and the Lorenz number L0 on temperature T. We first calculate the T dependence of the chemical potential μ from the number density n of electrons at the MIT using an averaged density of states obtained by diagonalization. Without any additional approximation, we determine from the behavior of S, K and L0 at low T as the MIT is approached. We find that and K decrease to zero at the MIT as and show that S does not diverge. Both S and L0 become temperature independent at the MIT and depend only on the critical behavior of the conductivity.
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Received 5 February 1999
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Villagonzalo, C., Römer, R. & Schreiber, M. Thermoelectric transport properties in disordered systems near the Anderson transition. Eur. Phys. J. B 12, 179–189 (1999). https://doi.org/10.1007/s100510050994
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DOI: https://doi.org/10.1007/s100510050994