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Modelling of the direct bonding wave

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Abstract

Direct bonding at room temperature and ambient pressure is well established for planar surfaces (Tong and Gösele 1999) but numerous device elaborations require direct bonding of structured surfaces as for example for some MEMS or bio chips. Based on the one dimensional (1D) bonding wave model of Rieutord et al. (2005), a two dimensional (2D) simulation based on wafer mechanical deformation and trapped air flow will be presented. Our model takes into account possible lateral air flow, and is thus well suited to simulate, for example, the bonding of structured wafer with rectangular cavities whose length are parallel or perpendicular to the bonding wave direction. Experiments showed that rectangular cavities parallel to the direction of the bonding front propagation improve the bonding front velocity. A law of the evolution of the bonding wave speed depending on the width between the cavities has been obtained by studying the bonding of beams of varying width.

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Authors and Affiliations

  1. CEA, LETI, Minatec Campus, 38054, Grenoble, France

    Damien Radisson & Frank Fournel

  2. Laboratoire Interdisciplinaire de Physique (LIPhy), Université Joseph Fourier, 38402, Saint Martin d’Hères, France

    Elisabeth Charlaix

Authors
  1. Damien Radisson
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  2. Frank Fournel
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  3. Elisabeth Charlaix
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Correspondence to Damien Radisson.

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Radisson, D., Fournel, F. & Charlaix, E. Modelling of the direct bonding wave. Microsyst Technol 21, 969–971 (2015). https://doi.org/10.1007/s00542-015-2445-3

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  • DOI: https://doi.org/10.1007/s00542-015-2445-3

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