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Laser–MBE growth of high-quality ZnO thin films on Al2O3(0001) and SiO2/Si(100) using the third harmonics of a Nd:YAG laser

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Abstract.

High-quality ZnO thin films were grown on single-crystalline Al2O3(0001) and amorphous SiO2/Si(100) substrates at 400–640 °C using laser molecular beam epitaxy. For film growth, the third harmonics of a pulsed Nd:YAG laser were illuminated on a ZnO target. The ZnO films were epitaxially grown on Al2O3(0001) with the narrow X-ray diffraction full width at half maximum (FWHM) of 0.04° and the films on SiO2/Si(100) exhibited a preferred c-axis orientation. Furthermore, the films exhibited excellent optical properties in photoluminescence (PL) measurements with very sharp excitonic and weak deep-level emission peaks. At 15 K, PL FWHM values of the films grown on Al2O3(0001) and SiO2/Si(100) were 3 and 18 meV, respectively.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea, , , , , , KR

    S.-J. An, W.I. Park & G.-C. Yi

  2. Department of Physics, University of Ulsan, Ulsan 680-749, Korea, , , , , , KR

    S. Cho

Authors
  1. S.-J. An
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  2. W.I. Park
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  3. G.-C. Yi
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  4. S. Cho
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Received: 8 May 2001 / Accepted: 18 September 2001 / Published online: 20 December 2001

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An, SJ., Park, W., Yi, GC. et al. Laser–MBE growth of high-quality ZnO thin films on Al2O3(0001) and SiO2/Si(100) using the third harmonics of a Nd:YAG laser . Appl Phys A 74, 509–512 (2002). https://doi.org/10.1007/s003390101035

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  • DOI: https://doi.org/10.1007/s003390101035

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