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Optical studies of Si/SiO 2 interfaces by second-harmonic generation spectroscopy of silicon interband transitions

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Abstract

Optical second-harmonic generation (SHG) studies of Si/SiO2 interfaces by resonant two-photon excitation of Si interband transitions are reviewed. Three different types of interband resonances at Si interfaces are identified in SHG spectra: (i) E1 and E2 critical-point bulk interband transitions in the space-charge region of charged Si interfaces, (ii) E1- and E2-type transitions associated with Si atoms at the interface in bulk-like tetrahedral coordination, and (iii) transitions related to Si interface atoms with bonding properties specific of the atomic structure of the interface. The effects of the polarity of space-charge fields on SHG spectra of Si(100)/SiO2 interfaces are also discussed.

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  1. Institut für Physik und Physikalische Technologien, TU Clausthal, Leibnizstr. 4, 38678, Clausthal-Zellerfeld, Germany

    W. Daum

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73.40.Qv; 73.20.-r; 42.65.Ky

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Daum, W. Optical studies of Si/SiO 2 interfaces by second-harmonic generation spectroscopy of silicon interband transitions. Appl. Phys. A 87, 451–460 (2007). https://doi.org/10.1007/s00339-007-3913-0

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