Vibrational study of the initial stages of the oxidation of Si(111) and Si(100) surfaces

Abstract

Using high-resolution electron energy loss spectroscopy (EELS) the vibrations of Si(111) and Si(100) surfaces in the early stages of oxidation have been investigated. Three different stages of oxidation, the last being the formation of a thin layer of vitreous SiO₂ are identified when the surfaces are held at a temperature of 700K during the exposure with molecular oxygen. We show that also the first two stages involve atomic oxygen in bridging positions between silicon atoms. Small exposures at low temperatures (100 K) produce vibrational features of a different, possibly molecular, species. For higher exposures at the same temperature the spectrum again develops the characteristics of atomic oxygen and the molecular species eventually disappears. Exposure at room temperature leads to a mixture of atomic and molecular oxygen for smaller exposures and to purely atomic oxygen for exposures greater than ∼ 10² L. At room temperature even exposures as high as ∼ 10¹¹ L do not produce the spectrum of vitreous SiO₂. The same is found for the “natural”, room temperature grown, oxide layer on silicon wafers which we have studied by introducing the sample into the spectrometer through an air-lock. Annealing of the wafer to 700 K produced the characteristic spectrum of vitreous SiO₂. The results are discussed in comparison with previous work.