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The influence of pH and H2O2 on surface quality and material removal rate during W-CMP

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Abstract

In the chemical mechanical polishing (CMP) process, chemical action is generally determined by pH regulator and oxidant in the polishing slurry. In this paper, tungsten (W) polished by CMP was examined, and the material removal mechanism was discussed. The influence of pH values and hydrogen peroxide (H2O2) concentrations on surface quality and material removal rate (MRR) were closely investigated. The MRR obtained from the CMP test indicates that the removal rate of W by the H2O2 oxidant reaches 34.10 μm/h under acidic pH conditions and the H2O2 oxidant improves the polishing rate of W. The obtained potentiodynamic polarization results show that the passivation layer formed under the H2O2 action cannot prevent the further corrosion of the slurry to the sample, but W can stably generate a tungsten trioxide (WO3) passivation layer under acidic conditions. XPS data confirm that the formation and dissolution of tungsten oxide passivation layers with different compositions are the main causes of these results. By analyzing the different morphologies (corrosion pits, grain boundaries, etc.) formed after tungsten chemical mechanical polishing (W-CMP), the deformation and removal mechanisms involved in the process are more deliberately exposed. This study enriches the understanding of the corrosion damage and material removal mechanisms of pure tungsten during CMP and contributes to the efficient and high-precision manufacturing of W components.

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Funding

This work is supported by the National Natural Science Foundation of China (Grant no. 52275467, 51905485, and U20A20293), the Natural Science Foundation of Zhejiang Province (LY21E050011), the Institute for Frontiers and Interdisciplinary Sciences, Zhejiang University of Technology (2022JCY09), and the Fundamental Research Funds for the Provincial Universities of Zhejiang (RF-A2022002).

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Authors and Affiliations

  1. College of Mechanical Engineering, Zhejiang University of Technology, Hangzhou, 310023, China

    Lin Wang, Feng Peng, Hongyu Chen, Wei Hang, Binghai Lyu & Julong Yuan

  2. School of Materials Science and Engineering, Hefei University of Technology, Hefei, 230009, China

    Cuiping Yu

  3. School of Mechanical Engineering, Hefei University of Technology, Hefei, 230009, China

    Shunhua Chen

  4. Department of Mechanical Engineering, City University of Hong Kong, Kowloon, 999007, Hong Kong

    Shijun Zhao

  5. College of Materials Science and Engineering, Hunan University, Changsha, 410082, China

    Zhenggang Wu

  6. Key Laboratory for Light-Weight Materials, Nanjing Tech University, Nanjing, 210009, China

    Yi Ma

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  1. Lin Wang
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Contributions

Conceptualization, L.W. and H.C.; methodology, W.H. and S.Z; software, F.P.; validation, F.P., W.H., and C.Y.; formal analysis, S.C.; investigation, F.P. and Y.M.; resources, L.W.; data curation, Z.W.; writing—original draft preparation, L.W. and H.C.; writing—review and editing, C.Y., Y.M., and H.C.; visualization, B.L. and J.L; supervision, Z.W.; project administration, S.C.; funding acquisition, H.C. All authors have read and agreed to the published version of the manuscript.

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Correspondence to Hongyu Chen, Cuiping Yu or Yi Ma.

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Wang, L., Peng, F., Chen, H. et al. The influence of pH and H2O2 on surface quality and material removal rate during W-CMP. Int J Adv Manuf Technol 127, 4097–4110 (2023). https://doi.org/10.1007/s00170-023-11805-3

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