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Crystal structure of stacking faults in InGaAs/InAlAs/InAs heterostructures

  • Real Structure of Crystals
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Abstract

Stacking faults and dislocations in InGaAs/InAlAs/InAs heterostructures have been studied by electron microscopy. The use of different techniques of transmission electron microscopy (primarily, highresolution dark-field scanning transmission electron microscopy) has made it possible to determine the defect structure at the atomic level.

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Authors and Affiliations

  1. National Research Centre “Kurchatov Institute”, Moscow, 123182, Russia

    I. N. Trunkin, M. Yu. Presniakov & A. L. Vasiliev

  2. Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics”, Russian Academy of Sciences, Moscow, 119333, Russia

    A. L. Vasiliev

Authors
  1. I. N. Trunkin
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  2. M. Yu. Presniakov
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  3. A. L. Vasiliev
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Corresponding author

Correspondence to A. L. Vasiliev.

Additional information

Original Russian Text © I.N. Trunkin, M.Yu. Presniakov, A.L. Vasiliev, 2017, published in Kristallografiya, 2017, Vol. 62, No. 2, pp. 249–253.

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Trunkin, I.N., Presniakov, M.Y. & Vasiliev, A.L. Crystal structure of stacking faults in InGaAs/InAlAs/InAs heterostructures. Crystallogr. Rep. 62, 265–269 (2017). https://doi.org/10.1134/S1063774517020298

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  • DOI: https://doi.org/10.1134/S1063774517020298

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