Il Nuovo Cimento D

, Volume 11, Issue 12, pp 1773–1784 | Cite as

Infrared angular spectroscopy characterization of epitaxial layers of n-type silicon grown on N+ or P+ substrates

  • M. Geddo
  • D. Maghini
  • A. Stella


In this paper the technique of infrared angular spectroscopy applied to the characterization of epitaxial layers of n-type silicon grown on N+ or P+ substrates is illustrated. Some results are reported and discussed concerning films having a free-carrier concentration ranging from 1014 cm−3 to 1017 cm−3 and thickness of the order of 10 μm. A significant comparison with results obtained by other techniques (four-point probe, spreading resistance, C−V plots, etc.) is performed and a few simple conclusions are drawn.


78.20 Optical properties and materials 


In questo lavoro è illustrata una applicazione della tecnica della spettroscopia angolare nell’infrarosso per caratterizzare film epitassiali di silicio tipo-n cresciuti su substrati N+ o P+. Sono riportati e discussi alcuni risultati concernenti film con concentrazione di portatori liberi nell’intervallo fra 1014 cm−3 e 1017 cm−3 e spessori dell’ordine di 10 μm. Viene effettuato un confronto con risultati ottenuti con altre tecniche (tecnica delle quattro punte, spreading resistance, curve C−V, etc.) e vengono riportate alcune semplici e significative conclusioni.


В этой статье техника инфракрасной спектроскопии применяется для определения характеристик эпитаксиальных слоев кремния n-типа, выращенных на N +-или P +-подложках. Приводятся и сообщаются некоторые результаты, касающиеся пленок, имежщих концентрацию свободных носителей в области от 1014 см−3 до 1017 см−3 и толщину порядка 10 мкм. Проводится сравнение с результатами, полученными с помощью других методов.


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Copyright information

© Società Italiana di Fisica 1989

Authors and Affiliations

  • M. Geddo
    • 1
  • D. Maghini
    • 1
  • A. Stella
    • 1
  1. 1.Dipartimento di Fisica dell’UniversitàPaviaItalia

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