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Ion implantation in semiconductors studied by Mössbauer spectroscopy

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Abstract

The application of Mössbauer spectroscopy as an extremely sensitive characterization technique for ion-implanted semiconductors, is illustrated. Factors influencing the final landing site of implanted ions are first reviewed, as well as ion beam induced material modifications. Recent applications of Mössbauer spectroscopy in this field are then discussed including the study of supersaturated solutions of Sb and Sn in Si, the formation of epitaxial and buried silicides and the search for the DX-center in GaAs.

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  1. Instituut voor Kern-en Stralingsfysika, University of Leuven, B-3030, Leuven, Belgium

    G. Langouche

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  1. G. Langouche
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Langouche, G. Ion implantation in semiconductors studied by Mössbauer spectroscopy. Hyperfine Interact 45, 199–216 (1989). https://doi.org/10.1007/BF02405880

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