Mössbauer spectroscopy of laser annealed tellurium implanted silicon (II).¹²⁹I

Abstract

Laser annealed^129mTc-implanted silicon has been investigated using¹²⁹I Mössbauer spectroscopy. At least three dopedependent charge states of substitutional iodine are found. For heavily doped p-type Si a single line component S₁, with isomer shift S=0.96(4) mm/s w. r. t. Cu¹²⁹I and an effective Debye temperature ϕ′=196(3) K is observed. This component is attributed to I⁺⁺. For compensated Si a single line component, S₂, assigned to I⁺, with S=2.39 (4) mm/s and ϕ′=170 (3) K is found. For n-type Si, a component S₃, characterized at 4.2 K by S=2.15 (4) mm/s and a quadrupole splitting eQV_zz/h=452 (8) MHz (n≃0)is observed. At higher temperatures S₃ shows quadrupole relaxation and its recoilless fraction becomes strongly anisotropic. This behaviour is explained on the basis of a transition from a static to a dynamic Jahn-Teller distortion. Component S₃ has been attributed to I⁰. In the spectra of compensated and n-type Si a less well-defined component Q, with parameters resembling those of S₃ but showing no quadrupole relaxation, is observed. This component has tentatively also been assigned to I^o. The results can be understood qualitatively on the basis of a simple MO-model.