Abstract
GaAs Gunn diodes were fabricated for pulse source application at 8 mm wave band and operated with pulsewidths of 0.05 to 2.0 microseconds and duty cycles of 0.001 to 0.01. Peak pulse output power levels of 0.8–1.2W are achieved and the maximum available power is 1.6W with the highest efficiency of 6.5 percent. A simple and compact pulsed power combiner is also given in this paper.
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References
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Tao, Y.M., Nin, J. & Delisle, G.Y. Ka-band solid-state pulsed Gunn oscillator and power combiner. Int J Infrared Milli Waves 16, 1769–1772 (1995). https://doi.org/10.1007/BF02068687
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DOI: https://doi.org/10.1007/BF02068687