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Effect of a quantizing magnetic field on the diffusivity-mobility ratio of the carriers in n-channel inversion layers on small gap semiconductors

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Czechoslovak Journal of Physics B Aims and scope

Abstract

In the present work, an attempt is made to derive expressions for the diffusivity-mobility ratios of the carriers in n-channel inversion layers on small-gap semiconductors under both weak and strong electric field limits in the presence of a quantizing magnetic field. It is found, taking n-channel layers on p-type InSb as examples, that the ratios show spiky oscillations with charging magnetic field, the periods of oscillations being independent of the degree of band non-parabolicity.

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Authors and Affiliations

  1. Institute of Radio Physics and Electronics, University College of Science & Technology, 92 Acharya Prafulla Chandra Road, 700009, Calcutta, India

    A. N. Chakravarti, A. K. Chowdhury, K. P. Ghatak, A. Dhar & D. R. Choudhury

Authors
  1. A. N. Chakravarti
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  2. A. K. Chowdhury
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  3. K. P. Ghatak
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  4. A. Dhar
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  5. D. R. Choudhury
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Additional information

On leave of absence fromthe Department of Physics, University of Patna, Patna, India.

The authors are indebted to Professor B. R. Nag for helpful discussion.

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Chakravarti, A.N., Chowdhury, A.K., Ghatak, K.P. et al. Effect of a quantizing magnetic field on the diffusivity-mobility ratio of the carriers in n-channel inversion layers on small gap semiconductors. Czech J Phys 31, 905–912 (1981). https://doi.org/10.1007/BF01603786

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  • DOI: https://doi.org/10.1007/BF01603786

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