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Computer simulation of the impurity distribution over the thickness of a film during growth out of the gas phase

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Abstract

The distribution of impurities over the thickness of a film is studied by computer simulation of the growth of the semiconducting film, taking into account attachment, detachment, reevaporation, and volume diffusion of atoms.

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Authors and Affiliations

  1. N. P. Ogarev Mordva State University, Saransk

    L. N. Aleksandrov, A. N. Kogan & V. I. D'yakonova

  2. Institute of the Physics of Semiconductors, Siberian Branch, Academy of Sciences of the USSR, Novosibirsk

    L. N. Aleksandrov, A. N. Kogan & V. I. D'yakonova

Authors
  1. L. N. Aleksandrov
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  2. A. N. Kogan
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  3. V. I. D'yakonova
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Additional information

Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 45, No. 2, pp. 320–325, August, 1983.

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Aleksandrov, L.N., Kogan, A.N. & D'yakonova, V.I. Computer simulation of the impurity distribution over the thickness of a film during growth out of the gas phase. Journal of Engineering Physics 45, 954–958 (1983). https://doi.org/10.1007/BF00826482

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  • DOI: https://doi.org/10.1007/BF00826482

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