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Scanning Tunneling Microscopy in (Bi, Sb)2(Te, Se, S)3 Chalcogenide Thermoelectrics

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Abstract

The morphology of the (0001) interlayer surface has been investigated by scanning tunneling microscopy in n-Bi1.6Sb0.4Te2.94Se0.06, n-Bi1.8Sb0.2Te2.82Se0.09S0.09, p-Bi0.8Sb1.2Te2.91Se0.09, and p-Bi0.7Sb1.3Te2.91Se0.09 solid solutions. Impurity and intrinsic defects (tellurium vacancies, antisite defects, and adatoms) were found on the (0001) surface, which are formed in these compositions due to the substitution of atoms in Bi2Te3 sublattices. The mean values of HM and the root-mean-square deviations HS with respect to height in the distribution of atoms on the surface have been determined depending on the composition of the solid solution. The effect of detected defects on the thermoelectric properties of solid solutions has been established.

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Funding

This study was supported by the Russian Foundation for Basic Research (grant no. 20-08-00464).

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Authors and Affiliations

  1. Ioffe Institute, 194021, St. Petersburg, Russia

    L. N. Lukyanova, I. V. Makarenko & O. A. Usov

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  1. L. N. Lukyanova
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  2. I. V. Makarenko
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  3. O. A. Usov
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Correspondence to L. N. Lukyanova.

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The authors declare that they have no conflicts of interest.

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Translated by V. Bukhanov

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Lukyanova, L.N., Makarenko, I.V. & Usov, O.A. Scanning Tunneling Microscopy in (Bi, Sb)2(Te, Se, S)3 Chalcogenide Thermoelectrics. Semiconductors 56, 195–200 (2022). https://doi.org/10.1134/S1063782622020105

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