Abstract
A new method of forming the β-FeSi2 phase on silicon and sapphire substrates by pulsed laser deposition in vacuum is considered. A series of structures is prepared with variations in the iron content in the target to be sputtered. The phase composition of films is analyzed by identifying peaks in the Raman spectra. The magnetic properties of samples are studied by recording the magnetic-field dependence of their Hall resistance. It is shown that the additional Fe3Si and FeSi phases are formed under conditions of growth that provide the more efficient inclusion of Fe atoms in the growing layer. Phase analysis of the films formed on silicon and sapphire substrates at identical technological parameters of growth is carried out.
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The study was supported by the Russian Foundation for Basic Research, project nos. 20-38-70063 and 20-32-90032.
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Translated by E. Smorgonskaya
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Kuznetsov, Y.M., Dorokhin, M.V., Nezhdanov, A.V. et al. Method for Forming Films of the β-FeSi2 Phase by Pulsed Laser Deposition in Vacuum. Semiconductors 55, 749–754 (2021). https://doi.org/10.1134/S1063782621090104
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DOI: https://doi.org/10.1134/S1063782621090104