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Epitaxial Fe3O4 Films Grown on R-Plane Sapphire by Pulsed Laser Deposition

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Inorganic Materials Aims and scope

Abstract—

We have studied the influence of growth temperature and molecular oxygen pressure on the properties of thin (≤180 nm) epitaxial magnetite (Fe3O4) (001) films grown by pulsed laser deposition on R-plane single-crystal sapphire (Al2O3 (\(\bar {1}\)012)) with and without MgO seed layer. The electrical, morphological, and structural characteristics of the films have been investigated as functions of growth conditions. Fe3O4 has been shown to have a stable growth plateau at pressures in the range (4–9) × 10–5 Torr. The properties of the epitaxial Fe3O4 films grown on a MgO seed layer (5 nm thick) approach those of magnetite films grown on single-crystal MgO substrates and are superior to those of films grown on pure R-plane sapphire. The best electrical characteristic of the films and the corresponding crystal structure can be obtained at elevated growth temperatures, whereas reduced growth temperatures minimize the roughness of their surface and maximize its homogeneity. These conditions can be reconciled by high-temperature high-vacuum annealing of magnetite films grown at reduced temperatures.

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ACKNOWLEDGMENTS

We are grateful to V.Yu. Vinnichenko for his assistance in the experimental characterization of the films and to D.V. Irzhak for performing the X-ray diffraction measurements.

Funding

This work was supported by the Russian Federation Ministry of Science and Higher Education, state program no. 075-00475-19-00.

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Authors and Affiliations

  1. Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, ul. Akademika Osip’yana 6, 142432, Chernogolovka, Moscow oblast, Russia

    I. V. Malikov, V. A. Berezin, L. A. Fomin & A. V. Chernykh

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  1. I. V. Malikov
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  2. V. A. Berezin
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  3. L. A. Fomin
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Correspondence to I. V. Malikov.

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Malikov, I.V., Berezin, V.A., Fomin, L.A. et al. Epitaxial Fe3O4 Films Grown on R-Plane Sapphire by Pulsed Laser Deposition. Inorg Mater 56, 164–171 (2020). https://doi.org/10.1134/S0020168520020120

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