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Electrical Transport Properties of a Sn-Doped Bi2Te1.5Se1.5 Solid Solution

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Inorganic Materials Aims and scope

Abstract—

We have studied the effect of doping with Sn (0.004 and 0.008 at %) on the properties of Bridgman-grown single crystals of an n-type Bi2Te1.5Se1.5 solid solution. Thermoelectric power, electrical conductivity, thermal conductivity, and Hall effect measurements in the range 77–400 K have shown that Sn influences the electrical transport properties of the solid solution. Single crystals with the composition Bi1.9996Sn0.0004Te1.5Se1.5 have higher thermoelectric efficiency in the temperature range 300–370 K than does the Sn-free solid solution. Moreover, measurements of thermoelectric power, which is rather sensitive to carrier concentration fluctuations, have demonstrated that the Sn-doped single crystals have highly uniform electrical properties along their length and across this direction.

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Authors and Affiliations

  1. Azerbaijani State Oil and Industry University, pr. Azadlyg 20, AZ 1010, Baku, Azerbaijan

    G. R. Gurbanov & M. B. Adygezalova

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  1. G. R. Gurbanov
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  2. M. B. Adygezalova
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Correspondence to G. R. Gurbanov or M. B. Adygezalova.

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Translated by O. Tsarev

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Gurbanov, G.R., Adygezalova, M.B. Electrical Transport Properties of a Sn-Doped Bi2Te1.5Se1.5 Solid Solution. Inorg Mater 56, 553–556 (2020). https://doi.org/10.1134/S0020168520060059

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  • DOI: https://doi.org/10.1134/S0020168520060059

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