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Ion Synthesis: Si–Ge Quantum Dots

  • XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology
  • Published:
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Abstract

We present a method of Si–Ge QDs formation by ion beam implantation (IBI) technique and high temperature annealing for self-organization. Implantation doses varied from 1014 to 1017 cm–2, ion energies ranged from 50 to 150 keV, annealing proceeded at temperature of 950 to 1050°C in argon environment. Formed QDs show strong infrared (IR) photoluminescence (PL) in the temperature region 15–250 K.

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Authors and Affiliations

  1. National Research University of Electronic Technology, Moscow, 124498, Russia

    N. N. Gerasimenko & O. A. Zaporozhan

  2. Angstrrem, Moscow, 124460, Russia

    N. S. Balakleyskiy

  3. Angstrem-T, Moscow, 124460, Russia

    A. D. Volokhovskiy

  4. P.N. Lebedev Physical Institute of the RAS, Moscow, 119991, Russia

    D. I. Smirnov

Authors
  1. N. N. Gerasimenko
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  2. N. S. Balakleyskiy
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  3. A. D. Volokhovskiy
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  4. D. I. Smirnov
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  5. O. A. Zaporozhan
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Corresponding author

Correspondence to N. S. Balakleyskiy.

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Gerasimenko, N.N., Balakleyskiy, N.S., Volokhovskiy, A.D. et al. Ion Synthesis: Si–Ge Quantum Dots. Semiconductors 52, 625–627 (2018). https://doi.org/10.1134/S1063782618050081

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  • DOI: https://doi.org/10.1134/S1063782618050081

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