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Tight-binding simulation of silicon and germanium nanocrystals

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Abstract

This review is devoted to the modeling of Si and Ge nanocrystals by means of the tight-binding method. First we give the short outline of the modeling methods and their application for the discription of silicon and germanium nanocrystals. Then, the tight-binding method with extended s, p, d, and s* basis is explained in details and the results obtained with the use of this method are presented.

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Authors and Affiliations

  1. Ioffe Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    A. V. Gert, M. O. Nestoklon, A. A. Prokofiev & I. N. Yassievich

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  1. A. V. Gert
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  2. M. O. Nestoklon
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  3. A. A. Prokofiev
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  4. I. N. Yassievich
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Correspondence to A. V. Gert.

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Original Russian Text © A.V. Gert, M.O. Nestoklon, A.A. Prokofiev, I.N. Yassievich, 2017, published in Fizika i Tekhnika Poluprovodnikov, 2017, Vol. 51, No. 10, pp. 1325–1340.

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Gert, A.V., Nestoklon, M.O., Prokofiev, A.A. et al. Tight-binding simulation of silicon and germanium nanocrystals. Semiconductors 51, 1274–1289 (2017). https://doi.org/10.1134/S1063782617100098

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