Abstract
On the basis of a type-II ZnSe/ZnTe superlattice, a MSM (metal—semiconductor–metal) photodetector is fabricated and investigated. The detector features low dark currents and a high sensitivity. The spectral characteristic of the detector provides the possibility of the selective detection of three separate spectral portions of visible and near-infrared radiation.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
H. Kroemer and G. Griffits, IEEE Electron. Dev. Lett. 4, 20 (1983).
D. L. Smith and C. Mailhiot, J. Appl. Phys. 62, 2545 (1987).
Zh. I. Alferov, Semiconductors 32, 1 (1998).
M. P. Mikhailova, I. A. Andreev, K. D. Moiseev, E. V. Ivanov, G. G. Konovalov, M. Yu. Mikhailov, and Yu. P. Yakovlev, Semiconductors 45, 248 (2011).
Y. Sharabani, Y. Paltiel, A. Sher, A. Raizman, and A. Zussman, Appl. Phys. Lett. 90, 232106 (2007).
P. Martyniuk, M. Kopytko, and A. Rogalski, Opto-Electron. Rev. 22, 127 (2014).
N. Gautam, H. S. Kim, M. N. Kutty, E. Plis, L. R. Dawson, and S. Krshna, Appl. Phys. Lett. 96, 231107 (2010).
S. Averin, R. Sachot, J. Hugi, M. de Fays, and M. Ilegems, J. Appl. Phys. 80, 1553 (1996).
S. V. Averin, P. I. Kuznetzov, V. A. Zhitov, et al., Solid State Electron. 52, 618 (2008).
S. V. Averin, P. I. Kuznetzov, V. A. Zhitov, L. Yu. Zakharov, V. M. Kotov, and N. V. Alkeev, Solid State Electron. 114, 135 (2015).
N. N. Ledentsov, J. Bohrer, M. Beer, F. Heinrichsdorff, M. Grundmann, and D. Bimberg, Phys. Rev. B 52, 14058 (1995).
W.-R. Chen, T.-H. Meen, Y.-C. Cheng, and W.-J. Lin, IEEE Electron. Dev. Lett. 27, 347 (2006).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © P.I. Kuznetzov, S.V. Averin, V.A. Zhitov, L.Yu. Zakharov, V.M. Kotov, 2017, published in Fizika i Tekhnika Poluprovodnikov, 2017, Vol. 51, No. 2, pp. 258–262.
Rights and permissions
About this article
Cite this article
Kuznetzov, P.I., Averin, S.V., Zhitov, V.A. et al. MSM optical detector on the basis of II-type ZnSe/ZnTe superlattice. Semiconductors 51, 249–253 (2017). https://doi.org/10.1134/S1063782617020099
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063782617020099