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Estimation of the efficiency of the introduction of a porous layer into a silicon-on-sapphire structure substrate to enhance the reliability of devices under irradiation

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Abstract

We investigate the efficiency of the introduction of a porous layer into the substrate of a silicon-onsapphire structure by the implantation of He ions to enhance the radiation resistance of devices. The properties of the introduced layer and its parameters affecting the concentration of minority charge carriers generated by irradiation are analyzed. The reported results of the analysis and calculations can be used to optimize He-ion implantation conditions during the formation of a porous layer.

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Authors and Affiliations

  1. National Research Center “Kurchatov Institute,”, Moscow, 123098, Russia

    P. A. Aleksandrov, E. K. Baranova & V. V. Budaragin

Authors
  1. P. A. Aleksandrov
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  2. E. K. Baranova
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  3. V. V. Budaragin
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Correspondence to P. A. Aleksandrov.

Additional information

Original Russian Text © P.A. Aleksandrov, E.K. Baranova, V.V. Budaragin, 2016, published in Fizika i Tekhnika Poluprovodnikov, 2016, Vol. 50, No. 8, pp. 1128–1132.

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Aleksandrov, P.A., Baranova, E.K. & Budaragin, V.V. Estimation of the efficiency of the introduction of a porous layer into a silicon-on-sapphire structure substrate to enhance the reliability of devices under irradiation. Semiconductors 50, 1107–1111 (2016). https://doi.org/10.1134/S1063782616080054

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  • DOI: https://doi.org/10.1134/S1063782616080054

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