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Effect of Gamma Irradiation on the Optoelectronics Properties of Porous Si/c-Si Heterojunction photodetector

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Abstract

Optoelectronic devices are sensitive to changes in their performance due to various environmental operating conditions, including factors such as elevated temperatures, humidity levels, radiation exposure, and chemical exposure. These conditions can potentially lead to degradation in the device properties. As a result, specific applications demand optoelectronic devices that are capable of enduring and operating effectively in harsh environmental conditions. In this study, we investigate the effects of gamma irradiation on the structural, electrical, and optoelectronic properties of an Au/Porous Silicon/n-Si/Al heterojunction photodetector. The irradiation is conducted using gamma rays at various doses: 48.11, 96.06, and 143.57 kGy. The structural properties and figures of merit are examined before and after gamma irradiation. The samples are characterized before and after irradiation using XRD, scanning electron microscopy, current-voltage characteristics, responsivity, quantum efficiency, and minority carrier lifetime. The XRD results for porous silicon confirm the presence of structural defects resulting from irradiation. SEM images, taken after exposure to a dose of 143.57 kGy, reveal severe damage in the irradiated samples, characterized by a dense and randomly distributed arrangement of irregular pores and grains.

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Acknowledgements

The authors would like to thank Mustansiryiah University Baghdad –Iraq, University of Technology –Iraq for their logistic support.

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No fund has been received for this research study.

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Authors and Affiliations

  1. Department of Physics, College of Education, Mustansiriyah University, Baghdad, Iraq

    Hasan A. Hadi

  2. Department of Applied Sciences, University of Technology, Baghdad, Iraq

    Raid A. Ismail

  3. Biomedical Engineering Department, Al-Esraa University, Baghdad, Iraq

    Abdullah R. Abdulwahhab

Authors
  1. Hasan A. Hadi
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  2. Raid A. Ismail
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  3. Abdullah R. Abdulwahhab
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Contributions

Hasan, Raid, and Abdullah conceived of the presented idea. Hasan, Raid, and Abdullah supervised the finding of this work. All authors discussed the results and contributed equally to the final manuscript. Hasan, Raid, and Abdullah conducted the experiments. Hasan and Raid analyzed and discussed the output of simulated results. All authors provided critical feedback and helped shape the research, analysis and manuscript.

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Correspondence to Hasan A. Hadi.

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Hadi, H.A., Ismail, R.A. & Abdulwahhab, A.R. Effect of Gamma Irradiation on the Optoelectronics Properties of Porous Si/c-Si Heterojunction photodetector. Silicon 16, 1097–1106 (2024). https://doi.org/10.1007/s12633-023-02731-w

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