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Study of the technology of the plasma nanostructuring of silicon to form highly efficient emission structures

  • Microelectronic and Nanoelectronic Technology
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Abstract

New methods for silicon nanostructuring and the possibility of raising the aspect ratios of the structures being formed are considered. It is shown that the technology developed relates to self-formation methods and is an efficient tool for improving the quality of field-emission cathodes based on carbon nanotubes (CNTs) by increasing the Si–CNT contact area and raising the efficiency of the heat sink.

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Authors and Affiliations

  1. “Technological Center” Research-and-Production Company, Moscow, Russia

    V. A. Galperin, E. P. Kitsyuk & A. A. Shamanaev

  2. National Research University “MIET”, Moscow, Russia

    E. P. Kitsyuk

  3. Institute of Nanotechnologies in Microelectronics, Russian Academy of Sciences, Moscow, Russia

    A. A. Pavlov

Authors
  1. V. A. Galperin
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  2. E. P. Kitsyuk
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  3. A. A. Pavlov
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  4. A. A. Shamanaev
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Corresponding author

Correspondence to A. A. Shamanaev.

Additional information

Original Russian Text © V.A. Galperin, E.P. Kitsyuk, A.A. Pavlov, A.A. Shamanaev, 2015, published in Izvestiya vysshikh uchebnykh zavedenii. Elektronika, 2014, Vol. 108, No. 4, pp. 36–41.

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Galperin, V.A., Kitsyuk, E.P., Pavlov, A.A. et al. Study of the technology of the plasma nanostructuring of silicon to form highly efficient emission structures. Semiconductors 49, 1731–1734 (2015). https://doi.org/10.1134/S1063782615130072

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  • DOI: https://doi.org/10.1134/S1063782615130072

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