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DFT-based Atomic Calculation of Si-doped HfO2 and Effect of its Negative Capacitance on Analog/RF, and VTC Parameters of MOSFET

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Abstract

Execution grids of developing electronic devices are being examined to find substitutes for MOSFETs in the quest to minimize power dissipation and ease energy efficiency limitations. The innovative architecture of negative capacitance field effect transistors (NCFETs), which offer advantages from the design, performance, and fabrication perspectives, is presented and examined in this article. This proposed structure in this work is called Modified NCFET. Modification of NCFET includes the Density-Functional-Theory (DFT) based atomic modelling for Ferroelectric material Hafnium Oxide (FEHfO2) with different doping concentrations of silicon (Si). The performance metrics of Modified NCFET are compared with conventional MOSFET designed on the same technology node to draw the effect of Si-doped HfO2. DFT calculations like Projected Density of States (PDOS), and energy band structure are done using the Quantum Atomistix Tool Kit (ATK) simulator which is atomic-scale modelling software, and device modelling is done by the Visual Technology-Computer-Aided-Design (TCAD) simulator. The device performance comparison of Modified NCFET and conventional MOSFET is done by the Visual TCAD in terms of short-channel effects (SCEs), analog/RF matrices, and FET-based inverter parameters (noise margin (NM), voltage transfer characteristics (VTC)). Additionally, the proposed NCFET is contrasted with the various FOMs' IRDS criteria.

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Acknowledgements

“The authors are grateful to the Microelectronics Research Laboratory, Delhi Technological University, for supporting the work.”

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“The authors declare that no funds, grants, or other support were received during the preparation of this manuscript.”

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Authors and Affiliations

  1. Department of Applied Physics, Delhi Technological University, Delhi, India

    Rashi Mann & Rishu Chaujar

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  1. Rashi Mann
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  2. Rishu Chaujar
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Contributions

Rashi Mann: Conceptualization, methodology, software, analysis, data curation, writing-original draft preparation.

Rishu Chaujar: Writing—review and editing at different stages, supervision.

Corresponding author

Correspondence to Rishu Chaujar.

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Mann, R., Chaujar, R. DFT-based Atomic Calculation of Si-doped HfO2 and Effect of its Negative Capacitance on Analog/RF, and VTC Parameters of MOSFET. Silicon 16, 1237–1252 (2024). https://doi.org/10.1007/s12633-023-02734-7

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