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Synthesis and Boosting the Morphological and Optical Characteristics of SiC/SrTiO3 Nanomaterials Doped PMMA/PEO for Tailored Optoelectronics Fields

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Abstract

This work aims to fabricate of SiC (silicon carbide)/SrTiO3 (strontium titanate) nanomaterials doped PMMA (polymethyl methacrylate)/ PEO (polyethylene oxide) to utilize in many electronics and optics nanodevices. The structural and optical properties of (PMMA-PEO/SiC-SrTiO3) nanostructures were investigated. The SEM and OM confirmed that good distribution of SiC-SrTiO3 NPs inside the matrix of PMMA-PEO. The results of optical properties for (PMMA-PEO/SiC-SrTiO3) nanostructures showed that the absorbance (A) enhanced of 47.5% at UV-spectra (λ = 300 nm) and 54.9% at visible- spectra (λ = 500 nm) and 61.4% at NIR-λ=800nm when the ratio of SiC /SrTiO3 NPs reached of 6.4 wt.%. These results make them as potential nanostructures to apply in optical and renewable energy fields. The energy gap reduced for allowed transition from 3.6 eV to 2.2 eV and from 3.1 eV to 1.5 eV for forbidden transition. The optical parameters of (PMMA-PEO) blend improved with rising in the SiC-SrTiO3 NPs concentrations, this performance made the (PMMA-PEO/SiC-SrTiO3) are suitable for several optics and nanoelectronics fields. Finally, the results of structural and optical characteristics indicated to the (PMMA–PEO/SiC-SrTiO3) nanostructures may be applied in various nanoelectronics devices.

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Acknowledgments

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Authors and Affiliations

  1. Department of Physics, College of Education for Pure Sciences, University of Babylon, Babylon, Iraq

    Hiba Kamil Jaafar, Ahmed Hashim & Bahaa H. Rabee

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  1. Hiba Kamil Jaafar
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  2. Ahmed Hashim
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  3. Bahaa H. Rabee
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Hiba Kamil Jaafar, Ahmed Hashim and Bahaa H. Rabee wrote the main manuscript text, prepared figures and reviewed the manuscript.

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Correspondence to Ahmed Hashim.

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Jaafar, H.K., Hashim, A. & Rabee, B.H. Synthesis and Boosting the Morphological and Optical Characteristics of SiC/SrTiO3 Nanomaterials Doped PMMA/PEO for Tailored Optoelectronics Fields. Silicon 16, 603–614 (2024). https://doi.org/10.1007/s12633-023-02706-x

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