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Design and Tailoring the Optical and Electronic Characteristics of Silicon Doped PS/SnS2 New Composites for Nano-Semiconductors Devices

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Abstract

The present paper deals with design of silicon doped PS/SnS2 new composites to use in different nano-semiconductors devices include optic, electronic, photonic and electric approaches with individual characteristics contain few cost, high corrosion resistance, lightweight and good optical, thermal and electronic properties. Using the density functional theory (DFT), some of the electronic (energy band structure, density of states) and electronic characteristics of PS/SnS2/Si composites. S-vacancy could lead to strong n doping for the original SnS2, which largely influences its electronic structure. The obtained results indicated to the PS/SnS2/Si composites may be used for various optoelectronics devices with low cost and high flexibly. The energy band gap PS/SnS2/Si composites was found (Eg = 0.19 eV) which make it can be suitable in various nano-semiconductors devices. The calculated density of states (DOS) may interpret this magnitude of energy gap.

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  1. College of Education for Pure Sciences, Department of Physics, University of Babylon, Hillah, Iraq

    Hind Ahmed & Ahmed Hashim

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Ahmed, H., Hashim, A. Design and Tailoring the Optical and Electronic Characteristics of Silicon Doped PS/SnS2 New Composites for Nano-Semiconductors Devices. Silicon 14, 6637–6643 (2022). https://doi.org/10.1007/s12633-021-01449-x

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