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Separation of Silicon from Coarse Al-Si Melts under Alternating Electromagnetic Field with Varying Frequencies

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Abstract

The separation behaviour of primary silicon from high-silicon Al-Si melts during the directional solidification under alternating electromagnetic field with varying frequencies and pulling rates is investigated. Results show that the separation of Si from Al-Si melts significantly depends on the electromagnetic frequency and the solidification rate of the melts as well. Moreover, the separation and enrichment effects of Si electromagnetic frequency with 3 kHz was superior to 30 kHz during the electromagnetic separation process, which was independent on the initial concentration. The flat and distinct separation interfaces could be formatted by using a relatively low pulling rate of 5 μm/s and a frequency of 3 kHz. Finally, the differential scanning calorimetry analysis showed that the alloy section had good thermal stability in the whole electromagnetic separation process. This method has the prospect and potential of becoming the method for manufacturing low-cost Al-Si alloys after the electrothermal process.

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Acknowledgments

The authors are grateful to the financial support by National Natural Science Foundation of China (No.51466005, 51864031).

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Authors and Affiliations

  1. State Key Laboratory of Complex Nonferrous Metal Resources Cleaning Utilization in Yunnan Province, Kunming, 650093, China

    Yufeng Zhang, Guoqiang Lv, Wenhui Ma, Yunfei He & Guangjie Xie

  2. Faculty of Metallurgical and Energy Engineering, The National Engineering Laboratory for Vacuum Metallurgy, Kunming University of Science and Technology, Kunming, 650093, China

    Yufeng Zhang, Guoqiang Lv, Wenhui Ma, Yunfei He & Guangjie Xie

  3. Engineering Research Center for Silicon Metallurgy and Silicon Materials of Yunnan Provincial Universities, Kunming, 650093, China

    Yufeng Zhang, Guoqiang Lv, Wenhui Ma, Yunfei He & Guangjie Xie

  4. Library of Kunming University of Science & Technology, Kunming, 650500, China

    Yanfeng Chang

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  1. Yufeng Zhang
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  2. Yanfeng Chang
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  3. Guoqiang Lv
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  4. Wenhui Ma
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  5. Yunfei He
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  6. Guangjie Xie
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Correspondence to Guoqiang Lv or Wenhui Ma.

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Zhang, Y., Chang, Y., Lv, G. et al. Separation of Silicon from Coarse Al-Si Melts under Alternating Electromagnetic Field with Varying Frequencies. Silicon 12, 2851–2860 (2020). https://doi.org/10.1007/s12633-020-00375-8

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  • DOI: https://doi.org/10.1007/s12633-020-00375-8

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