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Removal of B from Si by solidification refining with Si-Al melts

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Abstract

To discuss the removal of B by solidification refining of Si with a Si-Al melt, the segregation of B between solid Si and the Si-Al melt was investigated by use of the temperature-gradient-zone melting (TGZM) method. The segregation ratio of B at its infinite dilution was determined to be 0.49 (1473 K), 0.32 (1373 K), and 0.22 (1273 K), respectively. With the obtained segregation ratio, the activity coefficient of B in solid Si at its infinite dilution relative to pure solid B was determined by the following equation:

$$RT ln \gamma _{B(s) in solid Si}^ \circ = 117,000 ( \pm 2300) - 47.6 ( \pm 1.6)T ({J \mathord{\left/ {\vphantom {J {mol}}} \right. \kern-\nulldelimiterspace} {mol}})$$

Calculated results of directional solidification of the Si-Al alloy revealed the removal fraction of B to be as much as 90 pct. The effective removal of B by a solidification refining process with a Si-Al melt is clarified.

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Authors and Affiliations

  1. Department of Materials Engineering, The University of Tokyo, 113-8656, Tokyo, Japan

    Takeshi Yoshikawa (Graduate Student, Research Fellow) & Kazuki Morita (Associate Professor)

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  1. Takeshi Yoshikawa
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  2. Kazuki Morita
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Yoshikawa, T., Morita, K. Removal of B from Si by solidification refining with Si-Al melts. Metall Mater Trans B 36, 731–736 (2005). https://doi.org/10.1007/s11663-005-0076-2

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  • DOI: https://doi.org/10.1007/s11663-005-0076-2

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