Abstract
In the present work, the piezoelectric properties of 0.8Pb(Zr0.48Ti0.52)O3-0.2Pb[(Zn1/3Nb2/3)0.625(Mn1/3Nb2/3)0.375]O3 + 0.1 wt% Bi2O3 + 0.1 wt% CuO ceramics were improved by two-step sintering. Adjusting the sintering parameters, namely, temperature (T) and time (t) (T1 = 1050 °C, t1 = 5 min., T2 = 900 °C, t2 = 4 h), the Densification behavior of Bi2O3 and CuO-co-doped PZT-PZMnN was significantly improved at a low sintering temperature of 900 °C in the presence of PbO-Bi2O3 and CuO-PbO liquid phases. At optimized two-step sintering parameters, electrical properties of Bi2O3 and CuO-co-doped PZT-PZMnN ceramics are best: the density (ρ) of 7.85 g/cm3, dielectric constant (εr) of 1281, dielectric loss (tanδ) of 0.005, maximum constant (at Tm = 265 °C) of 14,468, electromechanical coupling factor (kp) of 0.61, (kt) of 0.50, the piezoelectric charge coefficient (d33) of 340 pC/N, the remanent polarization (Pr) of 22.4 µC/cm2, the mechanical quality factor (Qm) of 1260, the unipolar strain of 0.30% and the normalized strain of 576 pm/V were achieved at T2 = 900 °C and t2 = 4 h, which meeting the requirements of multilayer piezoelectric devices.
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This research is funded by Vietnam National Foundation for Science and Technology Development (NAFOSTED) under Grant Number 103.02-2021.22.
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Vuong, L.D. Densification behavior and electrical properties of the PZT-PZMnN-based ceramics prepared by two-step sintering. J Mater Sci: Mater Electron 33, 6710–6721 (2022). https://doi.org/10.1007/s10854-022-07848-z
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DOI: https://doi.org/10.1007/s10854-022-07848-z